2D layered black arsenic-phosphorus materials:Synthesis,properties,and device applications
作者机构：MOE Key Laboratory of Mesoscopic ChemistryMOE Key Laboratory of High Performance Polymer Materials and TechnologyJiangsu Key Laboratory of Advanced Organic MaterialsSchool of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210023China Shenzhen Research Institute of Nanjing UniversityShenzhen 518063China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2022年第15卷第4期
页 面：3737-3752页
核心收录：
学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：This work was supported by the National Key Research and Development Program of China(No.2017YFA0208200) the Fundamental Research Funds for the Central Universities of China(No.0205–14380266) the National Natural Science Foundation of China(Nos.22022505,21872069,and 22109069) the Natural Science Foundation of Jiangsu Province(No.BK20180008) the Doctoral Innovation and Entrepreneurship Program of Jiangsu Province(No.JSSCBS20210045) the Shenzhen Fundamental Research Program of Science,Technology and Innovation Commission of Shenzhen Municipality(No.JCYJ20180307155007589)
主 题：black arsenic-phosphorus two-dimensional(2D)materials black phosphorus field effect transistors mid-infrared photodetectors
摘 要：Phosphorene,especially black phosphorus(BP),has attracted considerable attention due to the unique characteristics,such as tunable direct bandgap,high carrier mobility,and strong in-plane ***,a new modification strategy for black phosphorus has been developed by alloying black phosphorus with the congener element *** elemental composition tuning of black phosphorus with arsenic can not only maintain its special crystal structure and high anisotropy but also modify its electrical and optical properties for the further applications of multifunctional *** achieved two-dimensional(2D)black arsenic-phosphorus materials exhibit outstanding optical,electrical,and photoelectric properties,such as very narrow band gap,anisotropic infrared absorption,and bipolar transfer characteristics,presenting great potential in infrared photodetectors and highperformance field effect transistors(FETs).In this review,we introduce the recent progress made in the synthesis and applications of black arsenic-phosphorus,and provide an outlook and perspectives on the current challenges and future opportunities in this *** hope that this review can bring new insights and inspirations on the further development of 2D black arsenic-phosphorus based materials and devices.
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