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magnetic skyrmions:Basic properties and potential applications

Interdisciplinary Materials 2023年第2期2卷 260-289页

作者： Sheng Li Xuewen Wang Theo Rasing State Key Laboratory of Advanced Technology for Materials Synthesis and Processing International School of Materials Science and EngineeringWuhan University of TechnologyWuhanPeople's Republic of China Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory FoshanPeople's Republic of China Institute for Molecules and Materials Radboud UniversityNijmegenThe Netherlands

magnetic skyrmions are particle-like topological magnetic textures that are potential information carriers in future *** enormous body of research confirms their existence in a broad range of magnetic materials since their first discovery in *** date,magnetic skyrmions can not only be found in asymmetric systems but also in centrosymmetric ***,engineered magnetic multilayers are promising structures for skyrmion-based spintronics because they can stabilize small-sized skyrmions at room temperature and facilitate their electric *** this overview,we introduce the topological nature,their special properties,and nucleation methods of skyrmions,and show their potential for *** on skyrmionic devices and developments toward other,more three-dimensional particle-like magnetic nanostructures,are discussed at the end.

关键词： antiferromagnetic skyrmions magnetic multilayers magnetic skyrmions skyrmion Hall effect spintronics ultrafast laser pulses

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Improved magnetic anisotropy of Co-based multilayer film with nitrogen dopant

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Rare Metals 2021年第10期40卷 2855-2861页

作者： Ling-Ran Yu Xiu-Lan Xu Yun-Long Jia Xuan Geng Xu-Jie Ma Yi-Fei Ma Yong-Hui Zan Chun Feng Jiao Teng School of Materials Science and Engineering University of Science and Technology BeijingBeijing 100083China School of Civil and Resources Engineering University of Science and Technology BeijingBeijing 100083China School of Mathematics and Physics University of Science and Technology BeijingBeijing 100083China

Modulating the magnetic anisotropy of ferromagnetic thin films is crucial for constructing high-density and energy efficient magnetic memory devices. Ta/W(N)/Co/Pt multilayers were deposited on silicon substrates by magnetron sputtering at room temperature. The influences of N dopant on the magnetic anisotropy of the multilayers were investigated by preparing the sample with N incorporation. The results indicate that when sputtering W target with only argon gas(Ar), Ta/W/Co/Pt sample shows inplane magnetic anisotropy(IMA). When sputtering W target at a different amount of N_(2) and Ar atmosphere, it can induce perpendicular magnetic anisotropy(PMA) for proper N-doped Ta/W(N)/Co/Pt sample. When the gas flow ratio of Ar:N_(2) is 16:6, the effective magnetic anisotropy constant reach its maximum value of 1.68×10^(5) J·m^(-3),which enhanced by about 400% than our past works(annealing treatment is necessary to induce PMA in Pt/Co/MgO system). X-ray diffraction(XRD) and X-ray reflection(XRR) results demonstrate that N dopants can effectively promote the formation of b-W phase and reduce the roughness of W(N)/Co interface, which are beneficial for PMA. X-ray electron spectroscopy(XPS) analysis reveals that N doping redistributes Co charges, nitrogen ions participate in electron allocation of Co and attract some electrons of Co to form orbital hybridization between Co3 d and N 2 p. This may be another important reason for the PMA formation.

关键词： magnetic multilayers N dopants Perpendicular magnetic anisotropy X-ray electron spectroscopy

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