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Improved magnetic anisotropy of Co-based multilayer film with nitrogen dopant

有氮掺杂物的共同基于的多层的电影的改进磁性的 anisotropy

作     者:Ling-Ran Yu Xiu-Lan Xu Yun-Long Jia Xuan Geng Xu-Jie Ma Yi-Fei Ma Yong-Hui Zan Chun Feng Jiao Teng Ling-Ran Yu;Xiu-Lan Xu;Yun-Long Jia;Xuan Geng;Xu-Jie Ma;Yi-Fei Ma;Yong-Hui Zan;Chun Feng;Jiao Teng

作者机构:School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China School of Civil and Resources EngineeringUniversity of Science and Technology BeijingBeijing 100083China School of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing 100083China 

出 版 物:《Rare Metals》 (稀有金属(英文版))

年 卷 期:2021年第40卷第10期

页      面:2855-2861页

核心收录:

学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术(可授工学、理学学位)] 0702[理学-物理学] 

基  金:financially supported by the National Key Research and Development Program of China(No.2019YFB2005800) the National Science Foundation of China(Nos.51871017,51871018 and 52071025) Beijing Natural Science Foundation(No.2192031) the Fundamental Research Funds for the Central Universities(No.FRF-TP-19-011B1) the Foundation of Beijing Key Laboratory of Metallic Materials and Processing for Modern Transportation 

主  题:Magnetic multilayers N dopants Perpendicular magnetic anisotropy X-ray electron spectroscopy 

摘      要:Modulating the magnetic anisotropy of ferromagnetic thin films is crucial for constructing high-density and energy efficient magnetic memory devices. Ta/W(N)/Co/Pt multilayers were deposited on silicon substrates by magnetron sputtering at room temperature. The influences of N dopant on the magnetic anisotropy of the multilayers were investigated by preparing the sample with N incorporation. The results indicate that when sputtering W target with only argon gas(Ar), Ta/W/Co/Pt sample shows inplane magnetic anisotropy(IMA). When sputtering W target at a different amount of N_(2) and Ar atmosphere, it can induce perpendicular magnetic anisotropy(PMA) for proper N-doped Ta/W(N)/Co/Pt sample. When the gas flow ratio of Ar:N_(2) is 16:6, the effective magnetic anisotropy constant reach its maximum value of 1.68×10^(5) J·m^(-3),which enhanced by about 400% than our past works(annealing treatment is necessary to induce PMA in Pt/Co/MgO system). X-ray diffraction(XRD) and X-ray reflection(XRR) results demonstrate that N dopants can effectively promote the formation of b-W phase and reduce the roughness of W(N)/Co interface, which are beneficial for PMA. X-ray electron spectroscopy(XPS) analysis reveals that N doping redistributes Co charges, nitrogen ions participate in electron allocation of Co and attract some electrons of Co to form orbital hybridization between Co3 d and N 2 p. This may be another important reason for the PMA formation.

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