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A room-temperature magnetic semiconductor from a Co-Fe-Nb-B metallic glass

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Science China(Physics,Mechanics & Astronomy) 2023年第4期66卷 94-99页

作者： Yu-Zhang Jiao Dmitry VLouzguine-Luzgin Ke-Fu Yao Zheng-Jun Zhang Na Chen Laboratory for Advanced Materials Processing Technology(MOE) State Key Laboratory of New Ceramics and Fine ProcessingSchool of Materials Science and EngineeringTsinghua UniversityBeijing 100084China Key Laboratory for Advanced Materials(MOE) Schoolof Materials Science and EngineeringTsinghua UniversityBeijing 100084China Advanced Institute for Materials Research(WPI-AIMR) Tohoku UniversitySendai 980-8577Japan Mathematics for Advanced Materials-OIL National Institute of Advanced Industrial Science and Technology(AIST)Sendai 980-8577Japan

magnetic semiconductors with Curie temperatures higher than room temperature show potential for developing spintronic devices with combined data processing and storage functions for next-generation computing *** this study,we present an n-type Co_(19.8)Fe_(8.6)Nb_(4.3)B_(6.0)O_(61.3) magnetic semiconductor with a high Curie temperature of~559 *** magnetic semiconductor has a room-temperature resistivity of~2.10×10^(4)Ωcm and a saturation magnetization of~76 emu/cm^(3).The n-type Co_(19.8)Fe_(8.6)Nb_(4.3)B_(6.0)O_(61.3)magnetic semiconductor was deposited on p-type silicon to form a heterojunction,exhibiting a rectifying *** results provide the design principles for discovering high Curie temperature magnetic semiconductors with determined conduction types,which would play an essential role in realizing nonvolatile spin-based transistors that break free from the confines of currently established Si-based information technology.

关键词： magnetic semiconductor ferromagnetic metallic glass high Curie temperature

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_(1-x-y)Fe_(x)Ni_(y)Sb

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Journal of semiconductors 2024年第1期45卷 16-21页

作者： Zhi Deng Hailong Wang Qiqi Wei Lei Liu Hongli Sun Dong Pan Dahai Wei Jianhua Zhao State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100190Chin

(Ga,Fe)Sb is a promising magnetic semiconductor(MS)for spintronic applications because its Curie temperature(T_(C))is above 300 K when the Fe concentration is higher than 20%.However,the anisotropy constant Ku of(Ga,Fe)Sb is below 7.6×10^(3)erg/cm^(3)when Fe concentration is lower than 30%,which is one order of magnitude lower than that of(Ga,Mn)*** address this issue,we grew Ga_(1-x-y)Fe_(x)Ni_(y)Sb films with almost the same x(≈24%)and different y to characterize their magnetic and electrical transport *** found that the magnetic anisotropy of Ga_(0.76-y)Fe_(0.24)Ni_(y)Sb can be enhanced by increasing y,in which Ku is negligible at y=1.7%but increases to 3.8×10^(5)erg/cm^(3)at y=6.1%(T_(C)=354 K).In addition,the hole mobility(μ)of Ga_(1-x-y)Fe_(x)Ni_(y)Sb reaches 31.3 cm^(2)/(V∙s)at x=23.7%,y=1.7%(T_(C)=319 K),which is much higher than the mobility of Ga_(1-x)Fe_(x)Sb at x=25.2%(μ=6.2 cm^(2)/(V∙s)).Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of(Ga,Fe)Sb by using Ni co-doping.

关键词： magnetic semiconductor molecular beam epitaxy Fe-Ni co-doping magnetic anisotropy hole mobility

Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS_(2) homojunction

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Journal of semiconductors 2022年第9期43卷 53-63页

作者： Jingzhi Fang Huading Song Bo Li Ziqi Zhou Juehan Yang Benchuan Lin Zhimin Liao Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and TechnologyShenzhen 518055China Hunan Key Laboratory of Two-Dimensional Materials Department of Applied PhysicsSchool of Physics and ElectronicsHunan UniversityChangsha 410082China

A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important compon-ent of future spintronic ***,we construct a two-dimensional(2D)Fe doped SnS_(2)(Fe-SnS_(2))homogeneous junction and investigate its electromagnetic transport *** Fe-SnS_(2) homojunction device showed large positive and unsatur-ated magnetoresistance(MR)of 1800%in the parallel magnetic field and 600%in the vertical magnetic field,indicating an obvi-ous anisotropic MR *** contrast,The MR of Fe-SnS_(2) homojunction is much larger than the pure diamagnetic SnS_(2) and most 2D *** application of a gate voltage can regulate the MR effect of Fe-SnS_(2) homojunction ***,the stability of Fe-SnS_(2) in air has great application *** Fe-SnS_(2) homojunction has a significant potential in future mag-netic memory applications.

关键词： magnetic semiconductor homojunction magnetoresistance MR anisotropic

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)

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Journal of semiconductors 2024年第4期45卷 36-41页

作者： Fei Sun Yi Peng Guoqiang Zhao Xiancheng Wang Zheng Deng Changqing Jin Institute of Physics Chinese Academy of SciencesBeijing 100190China School of Physics University of Chinese Academy of SciencesBeijing 101408China Center for High Pressure Science and Technology Advanced Research Beijing 100094Chin

Applying pressure has been evidenced as an effective method to control the properties of semiconductors,owing to its capability to modify the band configuration around Fermi ***,structural evolutions under external pres-sures are required to analyze the *** high-pressure structure of a magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)is studied with combination of in-situ synchrotron X-ray diffractions and diamond anvil *** materials become ferromagnetic with Curie temperature of 105 K after further 20%K *** title material undergoes an isostruc-tural phase transition at around 19 *** the transition pressure,it is remarkable to find lengthening of Zn/Mn-As bond within Zn/MnAs layers,since chemical bonds are generally shortened with applying *** with the bond stretch,interlayer As-As distances become shorter and the As-As dimers form after the phase *** further compres-sion,Zn/Mn-As bond becomes shortened due to the recovery of isotropic compression on the Zn/MnAs layers.

关键词： magnetic semiconductor high-pressure in-situ X-ray diffraction phase transition

Large and controllable tunneling magnetoresistance in ferromagnetic/magnetic-semiconductor/ferromagnetic trilayers

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Science China(Physics,Mechanics & Astronomy) 2013年第8期56卷 1514-1519页

作者： ZHANG PeiPei XU Ming Key Lab of Information Materials of Sichuan Province School of Electrical and Information EngineeringSouthwest University for Nationalities

In this work, we selected a magnetic-semiconductor as an interlayer and investigated the electronic transport properties in the ferromagnetic/ferromagnetic-semiconductor/ferromagnetic (FM/FS/FM) trilayers. The results indicate that the large TMR comparable to that in ferromagnetic/metal oxide/ferromagnetic sandwich can be obtained in the FM/FS/FM multilayers with considering the spin filter effect in the magnetic semiconductor layer. Moreover, the transmission coefficient and TMR can be tuned through thickness, Rashba spin-orbit coupling strength and molecular field of the magnetic semiconductor. Our calculations could provide a way to design the semiconductor spintronic devices with excellent and controllable properties.

关键词： magnetic semiconductor spin-orbit coupling transmission coefficient tunneling magnetoresistance

Oscillation of coercivity between positive and negative in Mn_xGe_(1-x):H ferromagnetic semiconductor films

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Chinese Physics B 2013年第5期22卷 509-513页

作者：秦羽丰颜世申萧淑琴李强代正坤沈婷婷杨爱春裴娟康仕寿代由勇刘国磊陈延学梅良模 School of Physics National Key Laboratory of Crystal MaterialsShandong University Department of Applied Physics School of Information Science and EngineeringShandong Agricultural University

Amorphous MnxGe1-x：H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron co- sputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x：H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6：H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.

关键词： magnetic semiconductor hydrogenation MnxGe1-x antiferromagnetic coupling

Discovery of new potential magnetic semiconductors in quaternary Heusler compounds by addition of lanthanides

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Chinese Physics B 2023年第12期32卷 589-593页

作者：郭金冯时怡陶容王国霞王越刘志锋 School of Physical Science and Technology Inner Mongolia UniversityHohhot 010021China

magnetic semiconductors have attracted a lot of attention by having both electronic charge and spin degrees of freedom. In this paper, we obtained twenty magnetic semiconductors such as FeVLaSb, FeVPrSb, FeCrTbSi, CoVDySi, and CoVHoSi by adding lanthanides to quaternary Heusler compounds based on the Slater-Pauling law and orbital hybridization theory. The relationship between the lattice constants and energy gaps of the magnetic semiconductors with lanthanide elements is investigated by in-depth analysis. These magnetic semiconductors of quaternary Heusler compounds are promising candidates to find applications as spin filtering materials in spintronics devices.

关键词： magnetic semiconductor rare-earth element quaternary Heusler compounds

Effect of hydrogenation time on magnetic and electrical properties of polycrystalline Si_(0.956) Mn_(0.044):B thin films

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Chinese Physics B 2009年第2期18卷 778-782页

作者：刘兴翀陆智海林应斌王剑峰路忠林吕丽娅张凤鸣都有为 School of Physical Electronics University of Electronic Science and Technology of China Department of Physics Nanjing University

This paper reports that polycrystalline Si0.956Mn0.044：B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization. The polycrystalline thin films were treated by hydrogen plasma excited with approach of radio-frequency plasma enhanced chemical vapour deposition for different time of 10 minutes, 15 minutes and 40 minutes. After hydrogenation, the structural properties of the films do not show any change, while both the saturation magnetization and the hole concentration in the films increase at first, then decrease with the increase of hydrogenation time. The obvious correlation between the magnetic properties and the transport properties of the polycrystalline Si0.956Mn0.044：B films suggests that a mechanism of hole-mediated ferromagnetism is believed to exist in Si-based diluted magnetic semiconductors.

关键词： magnetic semiconductor silicon magnetism

Electrically manipulating magnetization reversal via energy band engineering

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Science China(Physics,Mechanics & Astronomy) 2023年第5期66卷 181-187页

作者： Junwei Tong Yanzhao Wu Feifei Luo Fubo Tian Xianmin Zhang Key Laboratory for Anisotropy and Texture of Materials(Ministry of Education) School of Material Science and EngineeringNortheastern UniversityShenyang 110819China Department of Physics Freie Universität BerlinBerlin 14195Germany State Key Laboratory of Superhard Materials College of PhysicsJilin UniversityChangchun 130012China

Realization of a magnetization reversal by an external electric field is vital for developing ultra-low-power spintronic *** this report,starting from energy band engineering,a general design principle is proposed for achieving electrical manipulation of a nonvolatile 180°magnetization reversal.A half semiconductor(HSC)and a bipolar magnetic semiconductor(BMS)are selected as the model of magnetic layers,whose conduction-band minimum and valence-band maximum are in the same and opposite spin states,*** on the analysis of virtual hopping and tight-binding models,the interlayer coupling of HSC/insulator/BMS devices is successfully tuned between ferromagnetic and antiferromagnetic interactions by varying electric field ***,the interlayer coupling nearly disappears after removing the electric field,proving the nonvolatile magnetization *** first-principles calculations,the feasibility of present design strategy is further confirmed by a representative device with the structure of CrBr3/h-BN/2H-VSe_(2).This design guideline and physical phenomena may open an avenue to explore magnetoelectric coupling mechanisms and develop next-generation spintronic devices.

关键词： magnetic semiconductor magnetization reversal energy band engineering