Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS_(2) homojunction

作     者：Jingzhi Fang Huading Song Bo Li Ziqi Zhou Juehan Yang Benchuan Lin Zhimin Liao Zhongming Wei Jingzhi Fang;Huading Song;Bo Li;Ziqi Zhou;Juehan Yang;Benchuan Lin;Zhimin Liao;Zhongming Wei

作者机构：State Key Laboratory of Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China Shenzhen Institute for Quantum Science and EngineeringSouthern University of Science and TechnologyShenzhen 518055China Hunan Key Laboratory of Two-Dimensional MaterialsDepartment of Applied PhysicsSchool of Physics and ElectronicsHunan UniversityChangsha 410082China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2022年第43卷第9期

页      面：53-63页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：financially supported by the National Key Research and Development Program of China (Grant No. 2017YFA0207500) the National Natural Science Foundation of China (Grant No. 62125404) the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43000000) 

主　　题：magnetic semiconductor homojunction magnetoresistance MR anisotropic 

摘      要：A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important compon-ent of future spintronic ***,we construct a two-dimensional(2D)Fe doped SnS_(2)(Fe-SnS_(2))homogeneous junction and investigate its electromagnetic transport *** Fe-SnS_(2) homojunction device showed large positive and unsatur-ated magnetoresistance(MR)of 1800%in the parallel magnetic field and 600%in the vertical magnetic field,indicating an obvi-ous anisotropic MR *** contrast,The MR of Fe-SnS_(2) homojunction is much larger than the pure diamagnetic SnS_(2) and most 2D *** application of a gate voltage can regulate the MR effect of Fe-SnS_(2) homojunction ***,the stability of Fe-SnS_(2) in air has great application *** Fe-SnS_(2) homojunction has a significant potential in future mag-netic memory applications.