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Logging Evaluation Method of low resistivity Reservoir——A Case Study of Well Block DX12 in Junggar Basin

Journal of Earth Science 2009年第6期20卷 1003-1011页

作者：陈力群邹长春汪中浩刘海军姚爽陈冬 Key Laboratory of Geo-detection (China University of Geosciences Beijing)Ministry of Education Key Laboratory of Exploration Technologies for Oil and Gas Resources of Ministry of Education Yangtze University Logging Company CNPC Chuanqing Drilling & Exploration Corporation College of Information Engineering Chengdu University of Technology Research Institute of Petroleum Exploration and Development SINOPEC

The Hutubi （呼图壁） River reservoir of well block DX12 is a lithologic hydrocarbon reservoir that is under tectonic settings. The main oil-bearing sand body in this area is thin and has a poor transverse connectivity. Because of the complexity of the oil-water relationship, the oil reservoir presents a low resistivity feature, which brings great difficulties to hydrocarbon reservoir identification. This article develops an effective method of well log interpretation that can meet the requirement of low resistivity reservoir well logging evaluation. The authors combine the oil reservoir geology feature, the oil well logging curve characteristics and chemical analytical data to analyze the reasons for low resistivity, then establish the appropriate reservoir parameter explanation model, which uses different saturation computational methods according to different generations. When the clay content is more than 5%, we select W-S dual water model; when the shale content is more than 13%, we use the Schlumberger formula; when the shale content is less then 13%, we use Archie＇s formula. The well logging evaluation method of low resistivity reservoir has been improved by the irreducible water saturation formula which is established by the permeability, the porosity, the coefficient of pore structure and the shale content, hydrocarbon reservoir recognition charts, and the non-resistivity logging methods （repeat formation test （RFT）; modular dynamic test （MDT）, etc.）. The coincidence rate for this arrangement of the well logging integrated interpretation is 82.6% in the well block DX12. It is a powerful direction for low resistivity well log interpretation.

关键词： low resistivity well logging evaluation generation clay shale saturation.

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维普期刊数据库

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Preparation and Properties of PTC Material with low resistivity

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High Technology Letters 1996年第1期2卷 77-80页

作者：黄仲臧 Laboratory of Functional Inorganic Materials Shanghai Institute of CeramicsAcademia SinicaShanghai 200050P.R.China

The demand for PTC material for overcurrent protection application in automobile motors has been remarkably increasing. To meet the safety and reliability requirements in automobile system and communication equipment, it is necessary to prepare PTC material with low resistivity and high performance. In this paper, the preparation and the properties of PTC material with a resistivity of approximately 12Ω. cm, especially its overcurrent protection are described.

关键词： PTC material low resistivity Overcurrent protection

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Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

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Journal of Semiconductors 2015年第2期36卷 82-86页

作者：梁永烨 Kyungsoo Jang S.Velumani Cam Phu Thi Nguyen Junsin Yi National Key Laboratory for Electronic Measurement Technology North University of China College of Information and Communication Engineering Sungkyunkwan University Department of Electrical Engineering (SEES) CINVESTAV-IPN Avenida IPN 6508San Pedro Zacatenco Mexico D.F.

We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering *** device with the smallest Nt of 5.68×10^11 cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage（V（ON）） of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio（I（ON）/I（OFF）） of^8 x 10^*** increasing Nt,the V（ON）,S.S and I（ON）/I（OFF） were suppressed to-9.40 V,0.24 V/dec and 2.59×10^8,*** V（TH） shift under negative gate bias stress has also been estimated to investigate the electrical stability of the *** result showed that the reduction in Nt contributes to an improvement in the electrical properties and stability.

关键词： a-ITZO TFTs low resistivity interface trap density electrical properties electrical stability

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