Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

作     者：梁永烨 Kyungsoo Jang S.Velumani Cam Phu Thi Nguyen Junsin Yi 

作者机构：National Key Laboratory for Electronic Measurement Technology North University of China College of Information and Communication Engineering Sungkyunkwan University Department of Electrical Engineering (SEES) CINVESTAV-IPN Avenida IPN 6508San Pedro Zacatenco Mexico D.F. 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第2期

页      面：82-86页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：a-ITZO TFTs low resistivity interface trap density electrical properties electrical stability 

摘      要：We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering *** device with the smallest Nt of 5.68×10^11 cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage（V（ON）） of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio（I（ON）/I（OFF）） of^8 x 10^*** increasing Nt,the V（ON）,S.S and I（ON）/I（OFF） were suppressed to-9.40 V,0.24 V/dec and 2.59×10^8,*** V（TH） shift under negative gate bias stress has also been estimated to investigate the electrical stability of the *** result showed that the reduction in Nt contributes to an improvement in the electrical properties and stability.