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A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

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Chinese Physics B 2014年第11期23卷 620-625页

作者： Shweta Tripathi Department of Electronics & Communication Engineering Motilal Nehru National Institute of Technology

An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.

关键词： dual-material-gate MOSFET lightly doped drain short channel effect threshold voltage

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Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p–i–n tunneling FETs

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Journal of Semiconductors 2014年第6期35卷 47-52页

作者：王伟岳工舒杨晓张露张婷 College of Electronic Science and Engineering Nanjing University of Posts and Telecommunications

We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with 3D-Poisson＇s equations. For the first time, hetero gate dielectric and single LDD TFETs （SL-HTFETs） are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p ＋ 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications.

关键词： GNRFETs non-equilibrium Green's functions (NEGF) p-i-n tunneling field-effect transistor(TFET) GNR width lightly doped drain hetero gate dielectric

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Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress

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Chinese Physics B 2007年第10期16卷 3114-3119页

作者：陈海峰郝跃马晓华曹艳荣高志远龚欣 School of Microelectronics Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China

The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain （LDD） nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injections, i.e. low gate voltage hot hole injection （LGVHHI）, gate-induced drain leakage induced hot-hole injection （GIDLIHHI） and substrate hot-hole injection （SHHI）, have different influences on the devices damaged already by the previous hot electron injection （HEI） because of the different locations of trapping holes and interface states induced by the three types of injections, i.e. three types of stresses. Experimental results show that GIDLIHHI and LGVHHI cannot recover the degradation of electron trapping, but SHHI can. Although SHHI can recover the device＇s performance, the recovery is slight and reaches saturation quickly, which is suggested here to be attributed to the fact that trapped holes are too few and the equilibrium is reached between the trapping and releasing of holes which can be set up quickly in the ultrathin oxide.

关键词： lightly doped drain hot hole injection gate-induced drain leakage trapping

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Hot-carrier degradation for 90 nm gate length LDD- NMOSFET with ultra-thin gate oxide under low gate voltage stress

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Chinese Physics B 2007年第3期16卷 821-825页

作者：陈海峰郝跃马晓华李康倪金玉 School of Microelectronics Xidian University Xi'an 710071 China

The hot-carrier degradation for 90 nm gate length lightly-doped drain （LDD） NMOSFET with ultra-thin （1.4 nm） gate oxide under the low gate voltage （LGV）（at Vg = Vth, where Yth is the threshold voltage） stress has been investigated. It is found that the drain current decreases and the threshold voltage increases after the LGV （Vg = Vth） stress. The results are opposite to the degradation phenomena of conventional NMOSFET for the case of this stress. By analysing the gate-induced drain leakage （GIDL） current before and after stresses, it is confirmed that under the LGV stress in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot holes are trapped at interface in the LDD region and cannot shorten the channel to mask the influence of interface states as those in conventional NMOSFET do, which leads to the different degradation phenomena from those of the conventional NMOS devices. This paper also discusses the degradation in the 90 nm gate length LDD-NMOSFET with 1.4 nm gate oxide under the LGV stress at Yg = Yth with various drain biases. Experimental results show that the degradation slopes （n） range from 0.21 to 0.41. The value of n is less than that of conventional MOSFET （0.5 - 0.6） and also that of the long gate length LDD MOSFET （- 0.8）.

关键词： threshold voltage lightly doped drain gate-induced drain leakage current hot hole

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