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leakage current Optimization Techniques During Test Based on Don't Care Bits Assignment

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Journal of Computer Science & Technology 2007年第5期22卷 673-680页

作者：王伟胡瑜韩银和李晓维张佑生 School of Computer and Information Hefei University of Technology Hefei 230009China Key Laboratory of Computer System and ArchitectureInstitute of Computing TechnologyChinese Academy of Sciences Beijing 100080China Key Laboratory of Computer System and Architecture Institute of Computing Technology Chinese Academy of Sciences Beijing 100080China School of Computer and Information Hefei University of Technology Hefei 230009China

It is a well-known fact that test power consumption may exceed that during functional operation. leakage power dissipation caused by leakage current in Complementary Metal-Oxide-Semiconductor （CMOS） circuits during test has become a significant part of the total power dissipation. Hence, it is important to reduce leakage power to prolong battery life in portable systems which employ periodic self-test, to increase test reliability and to reduce test cost. This paper analyzes leakage current and presents a kind of leakage current simulator based on the transistor stacking effect. Using it, we propose techniques based on don＇t care bits （denoted by Xs） in test vectors to optimize leakage current in integrated circuit （IC） test by genetic algorithm. The techniques identify a set of don＇t care inputs in given test vectors and reassign specified logic values to the X inputs by the genetic algorithm to get minimum leakage vector （MLV）. Experimental results indicate that the techniques can effectually optimize leakage current of combinational circuits and sequential circuits during test while maintaining high fault coverage,

关键词： leakage current don't care bits minimum leakage vector leakage power

leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In_(0.18)Al_(0.82)N/GaN heterostructures

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Chinese Physics B 2014年第3期23卷 493-497页

作者：林芳沈波卢励吾许福军刘新宇魏珂 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Institute of Microelectronics of Chinese Academy of Sciences

By using temperature-dependent current-voltage, variable-frequency capacitance-voltage, and Hall measurements, the effects of the thermal oxidation on the electrical properties of Ni/Au Schottky contacts on lattice-matched Ino.18Alo.82N/GaN heterostructures are investigated. Decrease of the reverse leakage current down to six orders of magni- tude is observed after the thermal oxidation of the Ino.18Alo.82N/GaN heterostructures at 700 ℃. It is confirmed that the reverse leakage current is dominated by the Frenkel-Poole emission, and the main origin of the leakage current is the emis- sion of electrons from a trap state near the metal/semiconductor interface into a continuum of electronic states associated with the conductive dislocations in the InxAll-xN barrier. It is believed that the thermal oxidation results in the formation of a thin oxide layer on the InxAll-xN surface, which increases the electron emission barrier height.

关键词： leakage current thermal oxidation Frenkel-Poole emission

leakage current mechanisms of ultrathin high-κ Er_2O_3 gate dielectric film

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Journal of Semiconductors 2009年第10期30卷 21-26页

作者：武德起姚金城赵红生常爱民李锋 Xinjiang Technical Institute of Physics&Chemistry Chinese Academy of Sciences Institute of Semiconductors Chinese Academy of Sciences Graduate University of the Chinese Academy of Sciences

A series of high dielectric material Er2O3 thin films with different thicknesses were deposited on p-type Si（100）substrate by pulse laser deposition at different *** structures of the films were determined by means of X-ray diffraction（XRD）and high resolution transmission electron microscopy（HRTEM）.leakage current density was measured with an HP4142B semiconductor parameter *** XRD and HRTEM results reveal that Er2O3 thin films deposited below 400°C are amorphous,while films deposited from 400 to 840°C are well crystallized with（111）-preferential crystallographic orientation.I-V curves show that,for ultrathin crystalline Er2O3 films,the leakage current density increases by almost one order of magnitude from 6.20×10^-5 to 6.56×10^-4 A/cm^2,when the film thickness decreases by only 1.9 nm from 5.7 to 3.8 *** the leakage current density of ultrathin amorphous Er2O3 films with a thickness of 3.8 nm is only 1.73×10^-5 A/cm^***,analysis of leakage current density showed that leakage of ultrathin Er2O3 films at high field is mainly caused by Fowler-Nordheim tunneling,and the large leakage of ultrathin crystalline Er2O3 films could arise from impurity defects at the grain boundary.

关键词： Er2O3 high-κ gate dielectrics leakage current leakage current mechanisms

Accurate and fast table look-up models for leakage current analysis in 65nm CMOS technology

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Journal of Semiconductors 2009年第2期30卷 42-47页

作者：薛冀颖李涛余志平 Institute of Microelectronics Tsinghua University

Novel physical models for leakage current analysis in 65 nm technology are proposed. Taking into consideration the process variations and emerging effects in nano-scaled technology, the presented models are capable of accurately estimating the subthreshold leakage current and junction tunneling leakage current in 65 nm technology. Based on the physical models, new table look-up models are developed and first applied to leakage current analysis in pursuit of higher simulation speed. Simulation results show that the novel physical models are in excellent agreement with the data measured from the foundry in the 65 nm process, and the proposed table look-up models can provide great computational efficiency by using suitable interpolation techniques. Compared with the traditional physical-based models, the table look-up models can achieve 2.5X speedup on average on a variety of industry circuits.

关键词： leakage current 65 nm technology table look-up model interpolation

Suppression of leakage current in carbon nanotube field-effect transistors

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Nano Research 2021年第4期14卷 976-981页

作者： Lin Xu Chenguang Qiu Lian-mao Peng Zhiyong Zhang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking UniversityBeijing 100871China

Carbon nanotube field-effect transistor(CNT FET)has been considered as a promising candidate for future high-performance and low-power integrated circuits(ICs)applications owing to its ballistic transport and excellent immunity to short channel effects(SCEs).Still,it easily suffers from the ambipolar property,and severe leakage current at off-state originated from gate-induced drain leakage(GIDL)in CNT FETs with small *** some modifications on device structure have been experimentally demonstrated to suppress the leakage current in CNT FETs,there is still a lack of the structure with excellent scalability,which will hamper the development of CNT FETs toward a competitive technology ***,we explore how the device geometry design affects the leakage current in CNT FETs,and then propose the possible device structures to suppress off-state current and check their availability through the two-dimensional(2D)TCAD *** all the proposed structures,the L-shaped-spacer CNT FET exhibits significantly suppressed leakage current and excellent scalability down to sub-50 nm with a simple self-aligned gate *** to the simulation results,the 50 nm gate-length L-shaped-spacer CNT FET exhibits an off-state current as low as approximately 1 nA/μm and an on-current as high as about 2.1 mA/μm at a supply voltage of-1 V and then can be extended as a universal device structure to suppress leakage current for all the narrow-bandgap semiconductors based FETs.

关键词： carbon nanotube field-effect transistor leakage current TCAD simulation narrow-bandgap semiconductor

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

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Chinese Physics B 2010年第1期19卷 501-504页

作者：王良吉张书明朱继红朱建军赵德刚刘宗顺江德生王玉田杨辉 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au （5 nm/5 nm） film deposition. The surface morphology of wafers and the current voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes.

关键词： GaN light emitting diode surface treatment leakage current

Aqueous-processed insulating polymer/nanocrystal solar cells with effective suppression of the leakage current and carrier recombination

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Chinese Chemical Letters 2020年第6期31卷 1593-1597页

作者： Henan Sun Nannan Chen Yaohua Wang Gan Jin Wei Yuan Haizhu Sun Bai Yang College of Chemistry National Local United Engineering Laboratory for Power Batteries.Northeast Normal UniversityChangchun 130024China College of Material and Chemical Engineering Chuzhou UniversityChuzhou 239000China State Key Laboratory of Supramolecular Structure and Materials College of ChemistryJilin UniversityChangchun 130012China

As one of the most environmentally friendly photovoltaic(PV)conversion equipments,aqueousprocessed CdTe nanocrystal solar cells(NC SCs)have attracted great interest in recent years because of their excellent properties such as high charge-carrier mobility and broad ***,two issues including interfacial recombination and leakage current seriously restrict their *** this paper,insulating polymer poly(vinyl pyrrolidone)(PVP)is introduced into CdTe NC SCs to solve the *** experimental results of transmission electron microscopy(TEM),atomic force micro scopy(AFM)and dark current measurements,etc.,demonstrate the leakage current is effectively suppressed by introducing *** further designing device structure,the reduction of interfacial recombination after introducing PVP is *** strategically taking the advantages of PVP properties(e.g.,water solubility and thermostability),the power conversion efficiency of the devices with PVP is enhanced by almost 37%compared to pure CdTe *** work demonstrates an effective and low-cost method to fabricate NC SCs via aqueous ***,it also proves that appropriate content of insulating polymer is of beneficial in promoting the PV performance.

关键词： Aqueous-processed Polymer Nanocrystal Recombination leakage current

Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

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Journal of Semiconductors 2013年第2期34卷 37-40页

作者：陈万军张竞张波陈敬 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Department of Electronic and Computer Engineering Hong Kong University of Science and Technology

The gate forward leakage current in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier. Consequently, the gate forward leak- age current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.

关键词： fluorine-plasma surface treatment AlGaN/GaN HEMTs leakage current

Remarkable Improvement of Ferroelectric Properties and leakage current in BiFeO_3 Thin Films by Nd Modification

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Journal of Wuhan University of Technology(Materials Science) 2018年第1期33卷 64-67页

作者：韩冬王华 XU Jiwen ZHANG Xiaowen YANG Ling School of Materials Science and Engineering Guilin University of Electronic Technology

Ferroelectric and leakage properties are important for ferroelectric applications. Pure and Nd-doped（x=0.05-0.20） BiFeO3 thin films were fabricated by sol-gel method on FTO substrates. The phase structure, surface morphology, leakage current, ferroelectric properties, and optical properties of BiFeO3-based thin films were investigated. The substitution of Nd^3＋ ions for the Bi^3＋ site converts the structure from rhombohedral to coexisting tetragonal and orthorhombic. Nd doping improves the crystallinity of BiFeO3 thin films. The leakage current of Nd-doped BiFeO3 decreases by two to three orders of magnitude compared with that of pure BiFeO3. Among the samples, 15% Nd-doped BiFeO3 exhibits the strongest ferroelectric polarization of 17.96 μC/cm^2. Furthermore, the absorption edges of Bi1-xNdxFeO3 thin films show a slight red-shift after Nd doping.

关键词： BiFeO3 thin film ferroelectric leakage current sol-gel