Remarkable Improvement of Ferroelectric Properties and Leakage Current in BiFeO_3 Thin Films by Nd Modification

作     者：韩冬 王华 XU Jiwen ZHANG Xiaowen YANG Ling 

作者机构：School of Materials Science and Engineering Guilin University of Electronic Technology 

出 版 物：《Journal of Wuhan University of Technology(Materials Science)》 (武汉理工大学学报（材料科学英文版）)

年 卷 期：2018年第33卷第1期

页      面：64-67页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Funded by the Guangxi Experiment Center of Information Science China(No:YB1416) 

主　　题：BiFeO3 thin film ferroelectric leakage current sol-gel 

摘      要：Ferroelectric and leakage properties are important for ferroelectric applications. Pure and Nd-doped（x=0.05-0.20） BiFeO3 thin films were fabricated by sol-gel method on FTO substrates. The phase structure, surface morphology, leakage current, ferroelectric properties, and optical properties of BiFeO3-based thin films were investigated. The substitution of Nd^3＋ ions for the Bi^3＋ site converts the structure from rhombohedral to coexisting tetragonal and orthorhombic. Nd doping improves the crystallinity of BiFeO3 thin films. The leakage current of Nd-doped BiFeO3 decreases by two to three orders of magnitude compared with that of pure BiFeO3. Among the samples, 15% Nd-doped BiFeO3 exhibits the strongest ferroelectric polarization of 17.96 μC/cm^2. Furthermore, the absorption edges of Bi1-xNdxFeO3 thin films show a slight red-shift after Nd doping.