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GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off

Journal of Semiconductors 2009年第12期30卷 5-8页

作者：张小英阮育娇陈松岩李成 Department of Mathematics and Physics Xiamen University of Technology Department of Physics Semiconductor Photonics Research CenterXiamen University

A process methodology has been adopted to transfer GaN thin films grown on sapphire substrates to Si substrates using metal bonding and laser lift-off techniques. After bonding, a single KrF （248 nm） excimer laser pulse was directed through the transparent sapphire substrates followed by low-temperature heat treatment to remove the substrates. The influence of bonding temperature and energy density of the excimer laser on the structure and optical properties of GaN films were investigated systemically. Atomic force microscopy, X-ray diffraction and photoluminescence measurements showed that （1） the quality of the GaN film was higher at a lower bonding temperature and lower energy density; （2） the threshold of the energy density of the excimer laser lift-off GaN was 300 mJ/cm^2. The root-mean-square roughness of the transferred GaN surface was about 50 nm at a bonding temperature of 400 ℃.

关键词： GaN films silicon metal bonding laser lift-off atomic force microscopy X-ray diffraction

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laser projection proximity transfer for deterministic assembly of microchip arrays at scale

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Science China(Technological Sciences) 2022年第9期65卷 2205-2214页

作者： HU JinLong CHEN FuRong BIAN Jing SUN NingNing WANG KaiXin LING Hong YU HaiYang GAI MengXin XU LiZhi HUANG YongAn State Key Laboratory of Digital Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074China Flexible Electronics Research Center Huazhong University of Science and TechnologyWuhan 430074China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China Department of Mechanical Engineering The University of Hong KongHong Kong SAR 999077China

Deterministic assembly techniques that enable programmatic and massively parallel integration of chips are essential for the development of novel electronic systems such as micro LED displays.However,large-area integration of ultrathin micro-chips with high yield and transfer accuracy remains a great challenge due to the difficulties in selective transfer,adhesion switchability,and transfer deviation.Here,a“laser projection proximity transfer(laser PPT)”technique is presented for the deterministic assembly of microchip arrays at scale.One of the remarkable features is that the transfer status between the chip and the receiver substrate evolves from the original non-contact mode to contact mode for high-precision transfer,which overcomes the strict requirements of the flatness of stamp and substrate in contact-style transfer,and flight deviation of microchip array in noncontact-style transfer.Another feature is the rapid modulation of interfacial adhesion for reliable transfer via the use of thermally expandable microspheres to form microstructures and combining with a laser-induced blister.The adhesion regulation range is over 20 times without any damage to chip arrays.The results show that the transfer accuracy has been improved substantially with a minimum relative error of~0.5%.Combined with a laser beam projection system,demonstrations of laser PPT for selective assembly of fragile objects onto challenging non-adhesive/cured surfaces in batch illustrate its potential in the highprecision integration of microscale chips at scale.

关键词： microtransfer printing micro LED display laser lift-off interfacial adhesion

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高质量的AlGaN外延结构和UVC垂直腔面发射激光器的实现

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Science China Materials 2023年第5期66卷 1978-1988页

作者：郑重明王玉坤胡建正郭世平梅洋龙浩应磊莹郑志威张保平 Department of Electronic Engineering Optoelectronics Engineering Research CenterSchool of Electronic Science and Engineering(National Model Microelectronics College)Xiamen UniversityXiamen 361005China Advanced Micro-Fabrication Equipment Inc. Shanghai 201201China

AlGaN基垂直腔面发射激光器(VCSEL)因其优越的材料性质和器件优点吸引了很多关注.然而,由于材料外延生长和器件制备工艺的局限,AlGaN基VCSEL制备很困难.本工作通过侧向外延生长技术制备了高质量的AlGaN多量子阱(MQWs)结构的外延片,并通... 详细信息

AlGaN基垂直腔面发射激光器(VCSEL)因其优越的材料性质和器件优点吸引了很多关注.然而,由于材料外延生长和器件制备工艺的局限,AlGaN基VCSEL制备很困难.本工作通过侧向外延生长技术制备了高质量的AlGaN多量子阱(MQWs)结构的外延片,并通过X射线衍射(XRD)和光致发光(PL)实验对外延片进行了分析.XRD测量显示,外延片中的AlN模板层几乎是弛豫的,刃位错密度为10^(9)cm^(-2).随后,生长的AlGaN/AlN超晶格(SL)层被用来减少刃位错密度,使得量子阱中的位错密度为10^(8)cm^(-2).根据PL测试结果,MQWs的内量子效率(IQE)为62%,且在室温下的发光以辐射复合为主.通过激光剥离(LLO)和化学机械抛光(CMP)技术,将这些外延片制备成UVC VCSEL.经过这些工艺,MQWs的晶体质量没有受到影响,还在抛光之后的表面观察到了UVC波段的受激辐射.这些AlGaN基UVC VCSEL在275.91,276.28和277.64 nm实现了激射,最小激射阈值为0.79 MW cm^(-2).

关键词： AlGaN vertical-cavity surface-emitting lasers epitaxial lateral overgrowth laser lift-off UVC

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