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Van der Waals integration inch-scale 2D MoSe_(2) layers on Si for highly-sensitive broadband photodetection and imaging

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Nano Research 2023年第8期16卷 11422-11429页

作者： Yupiao Wu Shuo-En Wu Jinjin Hei Longhui Zeng Pei Lin Zhifeng Shi Qingming Chen Xinjian Li Xuechao Yu Di Wu School of Physics and Microelectronics and Key Laboratory of Material PhysicsZhengzhou UniversityZhengzhou 450052China Department of Electrical and Computer Engineering University of California San DiegoLa JollaCA 92093USA School of Microelectronics Science and Technology Sun Yat-Sen UniversityZhuhai 519082China Key Laboratory of Multifunctional Nanomaterials and Smart Systems Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

As one of the most promising materials for two-dimensional transition metal chalcogenides(2D TMDs),molybdenum diselenide(MoSe_(2))has great potential in photodetectors due to its excellent properties like tunable bandgap,high carrier mobility,and excellent air *** 2D MoSe_(2)-based photodetectors have been reported to exhibit admired performance,the large-area 2D MoSe_(2)layers are difficult to be achieved via conventional synthesis methods,which severely impedes its future ***,we present the controllable growth of large-area 2D MoSe_(2)layers over 3.5-inch with excellent homogeneity by a simple post-selenization ***,a high-quality n-MoSe_(2)/p-Si van der Waals(vdW)heterojunction device is in-situ fabricated by directly growing 2D n-MoSe_(2)layers on the patterned p-Si substrate,which shows a self-driven broadband photoresponse ranging from ultraviolet to mid-wave infrared with an impressive responsivity of 720.5 mA·W^(−1),a high specific detectivity of 10^(13) Jones,and a fast response time to follow nanosecond pulsed optical *** addition,thanks to the inch-level 2D MoSe_(2)layers,a 4×4 integrated heterojunction device array is achieved,which has demonstrated good uniformity and satisfying imaging *** large-area 2D MoSe_(2)layer and its heterojunction device array have great promise for high-performance photodetection and imaging applications in integrated optoelectronic systems.

关键词： molybdenum diselenide large-area synthesis broadband photodetector integrated device array van der Waals(vdW)heterojunction

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