Van der Waals integration inch-scale 2D MoSe_(2) layers on Si for highly-sensitive broadband photodetection and imaging
作者机构：School of Physics and Microelectronicsand Key Laboratory of Material PhysicsZhengzhou UniversityZhengzhou 450052China Department of Electrical and Computer EngineeringUniversity of California San DiegoLa JollaCA 92093USA School of Microelectronics Science and TechnologySun Yat-Sen UniversityZhuhai 519082China Key Laboratory of Multifunctional Nanomaterials and Smart SystemsSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2023年第16卷第8期
页 面：11422-11429页
核心收录：
学科分类：11[军事学] 080904[工学-电磁场与微波技术] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 110503[军事学-军事通信学] 0810[工学-信息与通信工程] 1105[军事学-军队指挥学] 1104[军事学-战术学] 082601[工学-武器系统与运用工程] 081105[工学-导航、制导与控制] 0826[工学-兵器科学与技术] 081001[工学-通信与信息系统] 081002[工学-信号与信息处理] 0811[工学-控制科学与工程]
基 金：This work was financially supported by the National Key R&D Program of China(No.2022YFB2803900) the National Natural Science Foundation of China(Nos.U2004165,U22A20138,and 11974016) the Natural Science Foundation of Henan Province,China(No.202300410376) Key Research and Development Program(social development)of Jiangsu Province(No.BE2021667)
主 题：molybdenum diselenide large-area synthesis broadband photodetector integrated device array van der Waals(vdW)heterojunction
摘 要：As one of the most promising materials for two-dimensional transition metal chalcogenides(2D TMDs),molybdenum diselenide(MoSe_(2))has great potential in photodetectors due to its excellent properties like tunable bandgap,high carrier mobility,and excellent air *** 2D MoSe_(2)-based photodetectors have been reported to exhibit admired performance,the large-area 2D MoSe_(2)layers are difficult to be achieved via conventional synthesis methods,which severely impedes its future ***,we present the controllable growth of large-area 2D MoSe_(2)layers over 3.5-inch with excellent homogeneity by a simple post-selenization ***,a high-quality n-MoSe_(2)/p-Si van der Waals(vdW)heterojunction device is in-situ fabricated by directly growing 2D n-MoSe_(2)layers on the patterned p-Si substrate,which shows a self-driven broadband photoresponse ranging from ultraviolet to mid-wave infrared with an impressive responsivity of 720.5 mA·W^(−1),a high specific detectivity of 10^(13) Jones,and a fast response time to follow nanosecond pulsed optical *** addition,thanks to the inch-level 2D MoSe_(2)layers,a 4×4 integrated heterojunction device array is achieved,which has demonstrated good uniformity and satisfying imaging *** large-area 2D MoSe_(2)layer and its heterojunction device array have great promise for high-performance photodetection and imaging applications in integrated optoelectronic systems.
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