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Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors

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Chinese Physics B 2018年第8期27卷 593-597页

作者： Liu-Hong Ma Wei-Hua Han Xiao-Song Zhao Yang-Yan Guo Ya-Mei Dou Fu-Hua Yang School of Physical Engineering Zhengzhou UniversityZhengzhou 450001China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Engineering Research Center for Semiconductor Integrated Technology Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technolog34 Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences.Beiiine 100083 China

We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation. Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorus- doped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased.

关键词： junctionless nanowire transistor quantum transport Hubbard band quantum dot

Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

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Chinese Physics B 2016年第6期25卷 552-556页

作者：马刘红韩伟华王昊吕奇峰张望杨香杨富华 Engineering Research Center for Semiconductor Integration Technology Institute of SemiconductorsChinese Academy of Sciences

Silicon junctionless nanowire transistor（JNT） is fabricated by femtosecond laser direct writing on a heavily n-doped SOI *** performances of the transistor,i.e.,current drive,threshold voltage,subthreshold swing（SS）,and electron mobility are *** device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 *** drain currents increasing by steps with the gate voltage are clearly observed from 10 K to50 K,which is attributed to the electron transport through one-dimensional（1D） subbands formed in the ***,the device exhibits a better low-field electron mobility of 290 cm2·V-1·s-1,implying that the silicon nanowires fabricated by femtosecond laser have good electrical *** approach provides a potential application for nanoscale device patterning.

关键词： junctionless nanowire transistor femtosecond laser lithography electron mobility quantum transport

Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

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Chinese Physics B 2018年第9期27卷 545-549页

作者： Xiao-Song Zhao Wei-Hua Han Yang-Yan Guo Ya-Mei Dou Fu-Hua Yangl, Engineenng Research Center for Semiconductor Integrated Technology Beijing Engineering Center of Semiconductor Micro-Nano Integrated TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing 100083China 3 State Key Laboratory for Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China

We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from 6 K to 250 K. Several current steps are observed at the initial stage of the transfer curves below 75 K, which result from the electron transport from Hubbard bands to one-dimensional conduction band. The current-off voltages in the transfer curves have a strikingly positive shift below 20 K and a negative shift above 20 K due to the electrostatic screening induced by the ionized dopant atoms. There exists the minimum electron mobility at a critical temperature of 20 K, resulting from the interplay between thermal activation and impurity scattering. Furthermore, electron transport behaviors change from hopping conductance to thermal activation conductance at the temperature of 30 K.

关键词： ionized dopant atom junctionless nanowire transistor hopping thermal activation current-off voltage