Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

作     者：Xiao-Song Zhao Wei-Hua Han Yang-Yan Guo Ya-Mei Dou Fu-Hua Yangl, 赵晓松;韩伟华;郭仰岩;窦亚梅;杨富华

作者机构：Engineenng Research Center for Semiconductor Integrated TechnologyBeijing Engineering Center of Semiconductor Micro-Nano Integrated TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of ElectronicElectrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing 100083China 3 State Key Laboratory for Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2018年第27卷第9期

页      面：545-549页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 070205[理学-凝聚态物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project supported by the National Key R&D Program of China(Grant No.2016YFA0200503) the National Natural Science Foundation of China(Grant No.61327813) 

主　　题：ionized dopant atom junctionless nanowire transistor hopping thermal activation current-off voltage 

摘      要：We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from 6 K to 250 K. Several current steps are observed at the initial stage of the transfer curves below 75 K, which result from the electron transport from Hubbard bands to one-dimensional conduction band. The current-off voltages in the transfer curves have a strikingly positive shift below 20 K and a negative shift above 20 K due to the electrostatic screening induced by the ionized dopant atoms. There exists the minimum electron mobility at a critical temperature of 20 K, resulting from the interplay between thermal activation and impurity scattering. Furthermore, electron transport behaviors change from hopping conductance to thermal activation conductance at the temperature of 30 K.