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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga_(2)O_(3)/p-diamond heterojunction

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Chinese Physics B 2022年第10期31卷 120-125页

作者： Wang Lin Ting-Ting Wang Qi-Liang Wang Xian-Yi Lv Gen-Zhuang Li Liu-An Li Jin-Ping Ao Guang-Tian Zou State Key Laboratory of Superhard Material College of PhysicsJilin UniversityChangchun 130012China Shenzhen Research Institute Jilin UniversityShenzhen 518057China National Key Discipline Laboratory of Wide Bandgap Semiconductor Xidian UniversityXi’an 710071China

A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes(SBDs) by using an n-Ga_(2)O_(3)/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga_(2)O_(3), the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit(FOM)value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.

关键词： diamond Schottky barrier diode junction terminal extension simulation

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High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure

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Chinese Physics B 2023年第8期32卷 479-485页

作者：朱盈林旺李东帅李柳暗吕宪义王启亮邹广田 State Key Laboratory of Superhard Materials College of PhysicsJilin UniversityChangchun 130012China Shenzhen Research Institute Jilin UniversityShenzhen 518057China

The trench diamond junction barrier Schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco *** with the conventional trench JBS diode,Schottky contact areas are introduced on the sidewall of the trench beside the top *** sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit(FOM)*** addition,the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown *** the optimal parameters of device structure,a high Baliga's FOM value of 2.28 GW/cm^(2) is ***,the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.

关键词： diamond Schottky barrier diode junction terminal extension simulation

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