Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga_(2)O_(3)/p-diamond heterojunction

作     者：Wang Lin Ting-Ting Wang Qi-Liang Wang Xian-Yi Lv Gen-Zhuang Li Liu-An Li Jin-Ping Ao Guang-Tian Zou 林旺;王婷婷;王启亮;吕宪义;李根壮;李柳暗;敖金平;邹广田

作者机构：State Key Laboratory of Superhard MaterialCollege of PhysicsJilin UniversityChangchun 130012China Shenzhen Research InstituteJilin UniversityShenzhen 518057China National Key Discipline Laboratory of Wide Bandgap SemiconductorXidian UniversityXi’an 710071China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第10期

页      面：120-125页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001) the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886) 

主　　题：diamond Schottky barrier diode junction terminal extension simulation 

摘      要：A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes(SBDs) by using an n-Ga_(2)O_(3)/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga_(2)O_(3), the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit(FOM)value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.