检索结果-南通市图书馆

MSSBAUER STUDY OF Fe_(79)B_(15.5)Si_(3.5)C_2 AMORPHOUS ALLOY BEFORE AND AFTER ion implantation

在线全文

学校读者我要写书评

暂无评论

Chinese Science Bulletin 1989年第9期34卷 722-726页

作者：李士李国栋李德新徐培光熊兆奎 Institute of High Energy Physics Academia Sinica Beijing Institute of Physics Academia Sinica Beijing Institute of Nuclear Science and Technology Sichuan University Chengdu

I. INTRODUCTionion-implantation technique is a new technique developed in recent years. It was first applied to semiconductor devices in the 1960s, and then widespread into many fields such as solid state physics and ... 详细信息

关键词： Mssbauer effect amorphous alloy ion-implantation crystallization process.

Characterization of ion-implanted 4H-SiC Schottky barrier diodes

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2010年第1期19卷 456-460页

作者：王守国张岩张义门张玉明 Department of Electronic and Information Engineering Harbin Institute of Technology Shenzhen Graduate School School of Information Science and Technology Northwest University School of Microelectronics Xidian University

ion-implantation layers are fabricated by multiple nitrogen ion-implantations （3 times for sample A and 4 times for sample B） into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes （SBDs） fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors （MESFETs）, and SiC static induction transistors （SITs）. The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kf~ respectively. The values of barrier height φB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C V testing results.

关键词： silicon carbide ion-implantation Schottky barrier diodes barrier height

Deposition of TiN Films by Novel Filter Cathodic Arc Technique

在线全文

学校读者我要写书评

暂无评论

Chinese Physics Letters 2006年第6期23卷 1533-1535页

作者：牛二武范松华李立吕国华冯文然张谷令杨思泽 Institute of Physics Chinese Academy of Sciences Beijing 100080

A straight magnetic filtering arc source is used to deposit thin films of titanium nitride. The properties of the films depend strongly on the deposition process. TiN films can be deposited directly onto heated substrates in a nitrogen atmosphere or onto unbiased substrates by condensing the Ti^＋ ion beam in about 300 eV N2^＋ nitrogen ion bombardment. In the latter case, the film stoichiometry is varied from an N：Ti ratio of 0.6-1.1 by controlling the arrival rates of Ti and nitrogen ions. Meanwhile, simple models are used to describe the evolution of compressive stress as function of the arrival ratio and the composition of the ion-assisted TiN films.

关键词： VACUUM-ARC ion-implantation VAPOR-DEPOSITion TITANIUM

Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Physics B 2010年第9期19卷 510-514页

作者：王守国张义门张玉明 School of Information Science and Technology Northwest University School of Microelectronics Xidian University

From the theoretical analysis of the thermionic emission model of current-voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal-semiconductor field-effect transistors （sample A and sample B for three and four times multiple ion-implantation channel region respectively） fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last.

关键词： silicon carbide interface states ion-implantation barrier height

Ground-based Investigations of Atomic Oxygen Erosion Behaviors of Silver and ion-implanted Silver

在线全文

学校读者我要写书评

暂无评论

Chinese Journal of Aeronautics 2006年第B12期19卷 252-256页

作者： DUO Shu-wang LI Mei-shuan YIN Xiao-hui LI Wen-kui LI Ming-sheng Jiangxi Key Laboratory of Surface Engineering Jiangxi Science ＆ Technology Normal University Nanchang 330013 China Shenyang National Laboratory for Materials Science Institute of Metal Research CAS Shenyang 110016 China

Silver foils and ion-implanted silver foils exposed to atomic oxygen （AO） generated in a ground simulation facility were investigated by the quartz crystal microbalance （QCM）, the scanning electron microscopy （SEM） and the X-ray photoelectron spectroscopy （XPS）. The experimental results show the presence of Ag2O and AgO in an oxidation process of the silver foil having exposure to AO. As soon as silver comes under the bombardment of atomic oxygen, the oxidation process starts with a thick film forming on the silver surface. Because of the development of stresses, the oxide layer gets cracked and spalled, which leads to appearance of a new silver surface intensifying further oxidation. At last, AgO begins to form on the outer surface of the oxide film. The analytical results of the XPS and the AES attest to formation of a continuous high-quality protective oxide-based layer on the surface of ion-implanted silver films after exposure to AO. This layer can well protect materials in question from erosion.

关键词： atomic oxygen ion-implantation silver oxidation

Influence of Yttrium implantation on Oxidation Behavior of Pure Nickel at 1000℃

在线全文

学校读者我要写书评

暂无评论

Journal of Donghua University(English Edition) 2005年第1期22卷 143-146页

作者：姜世杭靳惠明闫坤宫泽祥 Department of Mechanical Engineering Yangzhou University Yangzhou 225009 Department of Materials Science and Engineering Dalian University of Technology Dalian 110014

Isothermal and cyclic oxidation behaviors of pure and yttrium-implanted nickel were studied at 1 000℃ in air. The oxide scales formed on nickel substrates were performed using SEM and TEM. It was found that Y-implantation greatly improved the anti-oxidation ability of nickel both in isothermal and cyclic oxidizing experiments. Laser Raman microscopy was also used to study the stress status of oxide scales formed on nickel with and without yttrium. The main reason for the improvement in anti-oxidation and adhesion of oxide scale was Y-implantation greatly reduced the grain size of NiO and lowered the compressive stress within the scale. Yttrium implantation enhanced the adhesion of protective NiO oxide scale formed on nickel substrate.

关键词： Oxidation ion-implantation Laser Raman Yttrium.

Luminescence Characteristics of Yb^(3+) and Er^(3+) in Ⅲ-Ⅴ Semiconductors

在线全文

学校读者我要写书评

暂无评论

Journal of Rare Earths 1991年第1期9卷 31-34页

作者：曹望和张联苏 Changchun Institute of Physics Academia SinicaChangchun 130021China

The sharp luminescent peaks in Yb and Er-implanted InP,SI-InP,GaAs,and n-GaAs were observed at *** peaks at 1.0 and 1.5μm come from(4f)~2F_(5/2)→~2F_(7/2)of Yb^(3+)and ~4I_(13/2)→~4I_(15/2)of Er^(3+), *** optimum luminescent intensities can be obtained from Yb-implanted and Er-implanted sam- ples which were annealed at 800 and 750℃,respectively.A ccording to the analyses of PL and the rocking curve of X-ray double crystal diffraction,the best crystal structure of implanted InP layer has been obtained by an- nealing at 850℃.The interaction between Yb^(3+)and Er^(3+)in the SI-InP has been investigated for the first time. The quenching effect of Yb^(3+)and Er^(3+)with each other has been observed when the doses of Yb and Er-im- planted SI-InP are equal.

关键词： Rare earth ion Ⅲ-Ⅴ Semiconductor Luminescence ion-implantation

Rare earth effects on high temperature oxidation of pure nickel at 1000 ℃

在线全文

学校读者我要写书评

暂无评论

Progress in Natural Science:Materials International 2004年第4期 87-90页

作者： JIN Huiming, ZHANG Jianfeng, YAN Kun and GONG Zexiang (1. Materials Research Center, Department of Mechanical Engineering, Yangzhou University, Yangzhou 225009, China 2. Department of Materials Science and Engineering, Dalian University of Technology, Dalian 110014, China) Materials Research Center Department of Mechanical EngineeringYangzhou UniversityYangzhou 225009China Department of Materials Science and Engineering Dalian University of TechnologyDalian 110014China

Isothermal and cyclic oxidation behaviors of pure and yttrium-implanted nickel were studied at 1000 ℃ in air. SEM and TEM were used to examine the oxide scales formed on nickel substrate. It was found that Y-implantation greatly improved the anti-oxidation ability of nickel both in isothermal and cyclic oxidizing experiments. Acoustic emission (AE) technique was used to study the size and number distribution of defects at the oxide/metal interface. Laser Raman microscopy was also used to study the stress status of oxide scales formed on nickel with and without yttrium. The main reason for the improvement in anti-oxidation and adhesion of oxide scale was that Y-implantation greatly reduced the grain size of NiO and lowered the compressive stress within the scale. In the meantime, Y-implantation inhibited ion diffusion rate in the oxide scale and reduced the size and number of interfacial defects, hence remarkably enhanced the adhesion of protective NiO oxide scale formed on nickel substrate.

关键词： oxidation ion-implantation acoustic emission laser Raman yttrium.