Deposition of TiN Films by Novel Filter Cathodic Arc Technique

作     者：牛二武 范松华 李立 吕国华 冯文然 张谷令 杨思泽 

作者机构：Institute of Physics Chinese Academy of Sciences Beijing 100080 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2006年第23卷第6期

页      面：1533-1535页

核心收录：

学科分类：07[理学] 070204[理学-等离子体物理] 0702[理学-物理学] 

基　　金：国家863计划 

主　　题：VACUUM-ARC ION-IMPLANTATION VAPOR-DEPOSITION TITANIUM 

摘      要：A straight magnetic filtering arc source is used to deposit thin films of titanium nitride. The properties of the films depend strongly on the deposition process. TiN films can be deposited directly onto heated substrates in a nitrogen atmosphere or onto unbiased substrates by condensing the Ti^＋ ion beam in about 300 eV N2^＋ nitrogen ion bombardment. In the latter case, the film stoichiometry is varied from an N：Ti ratio of 0.6-1.1 by controlling the arrival rates of Ti and nitrogen ions. Meanwhile, simple models are used to describe the evolution of compressive stress as function of the arrival ratio and the composition of the ion-assisted TiN films.