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The Effects of Annealing and Discharging on the Characteristics of MgO Thin Films Prepared by ion beam-assisted deposition as a Protective Layer of AC-PDP

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Plasma Science and Technology 2007年第3期9卷 284-287页

作者：喻志农薛唯郑德修孙鉴 Department of Optical Engineering School of Information EngineeringBeijing Institute of TechnologyBeijing 100081China Institute of Electronic Physics and Device Xi'an Jiaotong UniversityXi'an 710049China

This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 ℃ for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the （200）-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation to the compressive stress of The failure mechanism of the MgO films plus the additional （200）-oriented MgO films was due compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM（atomic force microscopy） images show that the eroded surface of the （200）-oriented MgO thin film is smoother than that of the （111）-oriented fihn. Also, the （200）-oriented MgO thin film shows an improved ability to resist ion erosion compared to the （111）-oriented film.

关键词： MgO thin film ion beam-assisted deposition annealing discharging

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Fabrication of long-length ion beam-assisted deposited MgO templates for YBCO-coated conductors

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Rare Metals 2013年第6期32卷 574-578页

作者： Jie Xiong Yan Xue Yu-Dong Xia Fei Zhang Yu-Xi Zhang Li-Hua Li Xiao-Hui Zhao Bo-Wan Tao State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

The biaxially textured ion beam-assisted deposited(IBAD)-MgO templates were successfully prepared on polycrystalline Hastelloy metal substrate with reel-to-reel system for YB2Cu3O7-d(YBCO)-coated *** the solution deposition planarization technique,amorphous Y2O3films were coated on untreated Hastelloy substrate as the bed layer to obtain smooth,dense,and crack-free surface for subsequent IBAD-MgO *** 50 m long IBAD-MgO and homo-epitaxial(epi)-MgO buffer layers deposited on Y2O3films exhibit excellent crystallographic consistency along the scope with full width half maximum(FWHM)values of(110)DU and(200)Dx in the range of 5.5°–6.0°and3.0°–3.5°,*** match the lattice constant of YBCO material,LaMnO3cap layer was fabricated on IBAD-MgO templates by radio frequency(rf)magnetron sputtering with the FWHM values of in-plane and out-ofplane of 6.8°and 3.7°,respectively,indicating excellent biaxial texture.

关键词： ion beam-assisted deposition Solution deposition planarization Long length Crystallographic

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