The Effects of Annealing and Discharging on the Characteristics of MgO Thin Films Prepared by Ion Beam-Assisted Deposition as a Protective Layer of AC-PDP

作     者：喻志农 薛唯 郑德修 孙鉴 

作者机构：Department of Optical EngineeringSchool of Information EngineeringBeijing Institute of TechnologyBeijing 100081China Institute of Electronic Physics and DeviceXi'an Jiaotong UniversityXi'an 710049China 

出 版 物：《Plasma Science and Technology》 (等离子体科学和技术（英文版）)

年 卷 期：2007年第9卷第3期

页      面：284-287页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：MgO thin film ion beam-assisted deposition annealing discharging 

摘      要：This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 ℃ for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the （200）-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation to the compressive stress of The failure mechanism of the MgO films plus the additional （200）-oriented MgO films was due compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM（atomic force microscopy） images show that the eroded surface of the （200）-oriented MgO thin film is smoother than that of the （111）-oriented fihn. Also, the （200）-oriented MgO thin film shows an improved ability to resist ion erosion compared to the （111）-oriented film.