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Linear and nonlinear characteristics of time-resolved photoluminescence modulation by terahertz pulse

Chinese Physics B 2017年第10期26卷 1-6页

作者：龚姣丽刘劲松张曼褚政杨振刚王可嘉姚建铨 Wuhan National Laboratory for Optoelectronics School of Optical and Electronic InformationHuazhong University of Science and Technology Hubei Collaborative Innovation Center for High-efficient Utilization of Solar Energy School of ScienceHubei University of Technology

The linear and nonlinear characteristics of time-resolved photoluminescence （PL） of n-type bulk semiconductor GaAs modulated with terahertz （THz） pulse are studied by using an ensemble Monte Carlo （EMC） method. In this paper the center energy valley （Г valley） electron concentration changes with the pulse delay time, sampling time and the outfield are mainly discussed. The results show that the sampling time and the THz field should exceed certain thresholds to effectively excite photoluminescence quenching （PLQ）. Adopting a direct current （DC） field makes the sampling time threshold shortened and the linear range of THz field-modulation PL expanded. Moreover, controlling the sampling time and the outfield intensity can improve the linear quality： with forward time, the larger outfield is used; with backward time, the smaller outfield is used. This study can provide a theoretical basis of THz field linear modulation in a larger range for new light emitting devices.

关键词： THz pulse modulation photoluminescence ensemble Monte Carlo intervalley scattering

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Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

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Chinese Physics B 2016年第10期25卷 24-29页

作者：龚姣丽刘劲松褚政杨振刚王可嘉姚建铨 Wuhan National Laboratory for Optoelectronics School of Optical and Electronic InformationHuazhong University of Science and Technology School of Science Hubei University of Technology Hubei Collaborative Innovation Center for High-efficient Utilization of Solar Energy Hubei University of Technology

The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide(In Sb) and indium arsenide(In As) in an intense terahertz(THz) field are studied by using the method of ensemble Monte Carlo(EMC)at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 k V/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in In Sb, and only 5 THz in In As, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in In Sb, while impact ionization and intervalley scattering work together in In As. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field.

关键词： ensemble Monte Carlo nonparabolicity impact ionization intervalley scattering

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