Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

作     者：龚姣丽 刘劲松 褚政 杨振刚 王可嘉 姚建铨 

作者机构：Wuhan National Laboratory for Optoelectronics School of Optical and Electronic InformationHuazhong University of Science and Technology School of Science Hubei University of Technology Hubei Collaborative Innovation Center for High-efficient Utilization of Solar EnergyHubei University of Technology 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第10期

页      面：24-29页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 070102[理学-计算数学] 0701[理学-数学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11574105,61177095,61405063,and 61475054) the Natural Science Foundation of Hubei Province,China(Grant Nos.2012FFA074 and 2013BAA002) the Wuhan Municipal Applied Basic Research Project,China(Grant No.20140101010009) the Fundamental Research Funds for the Central Universities,China(Grant Nos.2013KXYQ004 and 2014ZZGH021) 

主　　题：ensemble Monte Carlo nonparabolicity impact ionization intervalley scattering 

摘      要：The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide(In Sb) and indium arsenide(In As) in an intense terahertz(THz) field are studied by using the method of ensemble Monte Carlo(EMC)at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 k V/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in In Sb, and only 5 THz in In As, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in In Sb, while impact ionization and intervalley scattering work together in In As. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field.