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integrated circuit for single channel neural signal regeneration

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Journal of Southeast University(English Edition) 2008年第2期24卷 155-158页

作者：李文渊王志功东南大学射频与光电集成电路研究所南京210096

Based on the 4-channel neural signal regeneration system which is realized by using discrete devices and successfully used for in-vivo experiments on rats and rabbits, a single channel neural signal regeneration integrated circuit （IC）is designed and realized in CSMC ＇ s 0. 6 μm CMOS （ complementary metal-oxide-semiconductor transistor ） technology. The IC consists of a neural signal detection circuit with an adjustable gain, a buffer, and a function electrical stimulation （FES） circuit. The neural signal regenerating IC occupies a die area of 1.42 mm × 1.34 mm. Under a dual supply voltage of ±2. 5 V, the DC power consumption is less than 10 mW. The on-wafer measurement results are as follows： the output resistor is 118 ml）, the 3 dB bandwidth is greater than 30 kHz, and the gain can be variable from 50 to 90 dB. The circuit is used for in-vivo experiments on the rat＇ s sciatic nerve as well as on the spinal cord with the cuff type electrode array and the twin-needle electrode. The neural signal is successfully regenerated both on a rat＇ s sciatic nerve bundle and on the spinal cord.

关键词： neural signal regeneration function electrical stimulation integrated circuit electrode CMOS technology

Technological Breakthrough and Domestic Substitution of Key Products Based on Asymmetric Competition:Taking the integrated circuit Industry as an Example

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Frontiers of Business Research in China 2023年第3期17卷 379-406页

作者： LIU Jianli LI Xianjun Institute of Industrial Economics Chinese Academy of Social SciencesBeijing 100006China

integrated circuit is a typical key product in the digital economy *** external containment,breakthroughs in core technologies of integrated circuit are confronted with barriers of first movers in underlying technological ecology and with their threats of decoupling from the supply ***,China has various bottlenecks in the proprietary industrial ecosystem,and domestic substitution lacks effective overall ***,it is essential to apply the underlying logic of asymmetric competition and to leverage a relatively complete industrial system,abundant application scenarios,solid talent base,and the institutional advantages of the new system for mobilizing resources nationwide to break through in integrated circuit manufacturing technologyand in domestic *** such,it is necessary to further strengthen the top-level design,leverage the advantages of the new system for mobilizing resources nationwide to enhance the institutiona1lguarantee for domestic substitution of bottlenecks,and enhance basic research to consolidate the technological foundation for domestic ***,we should implement talent strategy to enhanceethe driving force of human resource for domestic substitution *** should also further opening-up and cooperation policy to create an open domestic substitution *** addition,we should increase counter-cyclical investment to nurture leaderssin asymmetric competition,and seize the demand window to drive domestic substitution with"epoch-making products."

关键词： key products technological catch-up domestic substitution asymmetric competition integrated circuit

A novel design of power management integrated circuit with 90 plus efficiency used in AC/DC converter

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Engineering Sciences 2010年第1期8卷 53-58页

作者： Jiang Yanfeng Microelectronic Center College of Information Engineering North China University of Technology Beijing 100144 China

Recently, resonant AC/DC converter has been accepted by the industry. However, the efficiency will be decreased at light load. So, a novel topology with critical controlling mode combined with resonant ones is proposed in this paper. The new topology can correspond to a 90 plus percent of power converting. So,a novel topology of an state of art integrated circuit, which can be used as power management circuit, has been designed based on the above new topology. A simulator which is specifically suitable for the power controller has been founded in this work and it has been used for the simulation of the novel architecture and the proposed integrated circuit.

关键词： power management integrated circuit converter resonance

ESD Protection Design and Characteristic Analysis of Advanced Process integrated circuit

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电气工程与自动化（中英文版） 2020年第1期9卷 1-3页

作者： Mao Fan R&D Department Shanghai Jinling Information technology co.Ltd201210China

The electrostatic discharge(ESD)phenomenon is very common,in daily life,many places will appear ESD ***,ESD is a potential hazard for integrated *** paper analyzes the ESD protection design and characteristics of advanced process integrated circuits,and puts forward personal views combined with experience,hoping to bring help to the people who pay attention to the ESD protection of integrated circuits.

关键词： Electrostatic Protection integrated circuit Failure Analysis

Recent progress of integrated circuits and optoelectronic chips

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Science China(Information Sciences) 2021年第10期64卷 103-135页

作者： Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI School of Microelectronics Xidian University State Key Laboratory of integrated Service Networks Xidian University National integrated circuit Innovation Center School of Microelectronics Fudan University School of integrated circuit Science and Engineering Beihang University China Center for Information Industry Development Frontier Institute of Chip and System Fudan University Institute of Microelectronics Peking University Nanjing Electronic Devices Institute State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Institute of Microelectronics Tsinghua University Center for Carbon-based Electronics Department of Electronics Peking University CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Origin Quantum Computing Company Limited Key Laboratory of Flexible Electronics & Institute of Advanced Materials Nanjing Tech University State Key Laboratory of Electronic Thin Films and integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China National Laboratory of Solid State Microstructures & College of Engineering and Applied Sciences Nanjing University State Key Laboratory on integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer Science Peking University School of Electrical and Electronic Engineering Tiangong University Center for Information Photonics and Communications School of Information Science and TechnologySouthwest Jiaotong University School of Electronic Electrical and Communication Engineering

integrated circuits(ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore’s law" in the past 60 years, and now has entered the post Moore’s law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

关键词： integrated circuit photonic neural computing semiconductor science and technology optoelectronic device and chip photonic integrated circuit wide bandgap semiconductors silicon photonics hybrid integration quantum chip integrated microwave photonic

Research on Silicon-Based Terahertz Communication integrated circuits

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Chinese Journal of Electronics 2022年第3期31卷 516-533页

作者： ZHOU Peigen CHEN Jixin TANG Siyuan YU Jiayang WANG Chen LI Huanbo LU Haiyan YAN Pinpin HOU Debin CHEN Zhe HONG Wei State Key Laboratory of Millimeter Waves Southeast University Science and Technology on Monolithic integrated circuits and Modules Laboratory

With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz(THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology,its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.

关键词： Communication system integrated circuit Local oscillator On-chip antenna Power amplifier Terahertz

Carbon nanotube-based CMOS transistors and integrated circuits

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Science China(Information Sciences) 2021年第10期64卷 136-151页

作者： Yunong XIE Zhiyong ZHANG Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics and Center for Carbon-based Electronics Department of Electronics Peking University Academy for Advanced Interdisciplinary Studies Peking University

Over the last sixty years, the scaling of silicon-based complementary metal-oxide-semiconductor(CMOS) field-effect transistors(FETs) have promoted the rapid development of microelectronic ***, the development of Si CMOS technology is currently subject to serious challenges from various aspects such as physics limit, cost, and power consumption, and is becoming increasingly difficult. Material innovation is exerting an ever-greater role in the integrated circuit design. By looking for thinner semiconductor materials with higher mobility as the active layer to construct smaller and higher-performance transistors, it is possible to further stimulate transistors and integrated circuits on performance, density,power dissipation, and functions. In 1991, Iijima discovered carbon nanotubes(CNTs). Due to its excellent electrical properties and intrinsic nano-scale size, CNT has been considered by academia and industry to have great potential to replace silicon materials in the future for the extremely scaled technology nodes or novel electronic applications. This paper reviews the latest advancements in CNT-based electronics ***, the challenges and pathways for nanotube transistors to transition into commercial applications are discussed.

关键词： carbon nanotube transistor integrated circuit scaling nanoelectronics

SOFTWARE TOOLS FOR ANALYZING NBTI-INDUCED DIGITAL circuit DEGRADATION

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Journal of Electronics(China) 2009年第5期26卷 715-719页

作者： Luo Hong Wang Yu Luo Rong Yang Huazhong Department of Electronic Engineering Tsinghua University Beijing 100084 China TNList Tsinghua University Beijing 100084 China

As semiconductor manufacturing migrates to more advanced technology nodes, accelerated aging effect for nanoscale devices poses as a key challenge for designers to find countermeasures that effectively mitigate the degradation and prolong system's lifetime. Negative Bias Temperature Instability (NBTI) is emerging as one of the major reliability concerns. Two software tools for NBTI analyzing are proposed in this paper, one for transistor-level, and the other for gate-level. The transistor-level can be used to estimate the delay degradation due to NBTI effect very accurately, while the gate-level can be used for repeat analysis in circuit optimization because of its fast computing speed.

关键词： integrated circuit Reliability Negative Biased Temperature Instability (NBTI) Software tool

Matching processing in the design of integrated circuits

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International English Education Research 2018年第2期 83-84页

作者： YANG Ying WANG Sen Dalian Neusoft University of Information Dalian Liaoning 116023

In the design of the integrated circuits, in order to ensure that the designed products conform to the presupposed parameters, while designing the schematic diagrams of the circuits, we should also strengthen the layout design. Especially in the design of the analog circuits, in the layout design, there is a high degree of matching requirement for the MOS. It will have an important impact on the performance of the chips. Based on this perspective, the author of this paper analyzes how to realize the matching of the three aspects of the MOS, the resistance and the capacitance in the integrated circuit design, in order to avoid the problem of the mismatch due to the arts and crafts.

关键词： integrated circuit layout design matching