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Optical transparent metamaterial structure for microwave-infrared-compatible camouflage based on indium tin oxide

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中国科学:技术科学英文版 2023年第10期66卷 2850-2861页

作者： LUO Hui XIONG Yao CHENG YongZhi CHEN Fu LI XiangCheng School of Information Science and Engineering Wuhan University of Science and TechnologyWuhan 430081China State Key Laboratory of Refractories and Metallurgy Wuhan University of Science and TechnologyWuhan 430081China

A visible transparent metamaterial absorber was designed and fabricated with ultrabroadband microwave absorption and low infrared emissivity to meet the increasing demand for multispectral compatible camouflage. The absorber was fabricated with a low-infrared emissive layer at the top, a microwave-absorbing layer in the middle, and a reflective layer at the bottom, which were separated by polymethyl methacrylate plates. The absorber showed an average visible transmittance of 55%, infrared emissivity of ~0.37, and effective microwave absorption bandwidth of 32.1 GHz with a total thickness of 3.0 mm. Furthermore,microwave absorption exhibited wide-angle stability and polarization insensitivity characteristics. The mechanism of microwave attenuation was further explored through effective electromagnetic parameters as well as surface current, electric field, magnetic field, and energy loss density distributions. The experimental results were consistent with those of the simulations and calculations, indicating the potential of the designed metamaterial absorber for future applications in multispectral compatible camouflage.

关键词： optical transparent microwave absorption metamaterial low infrared emissivity indium tin oxide

Synthesis of indium tin oxide nano-polycrystalline powders by ultrasonic spray pyrolysis

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Rare Metals 2022年第10期41卷 3579-3584页

作者： Li-Hua Zhang Sheng-Hui Guo Chao-Jin Zhou Jin-Hui Peng Shao-Hua Ju Jian-Bo Lan Yunnan Provincial Key Laboratory of Intensification Metallurgy Kunming650093China Key Laboratory of Unconventional Metallurgy Ministry of EducationKunming650093China National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology Kunming650093China Faculty of Metallurgical and Energy Engineering Kunming University of Science and TechnologyKunming650093China State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization Kunming650093China

indium tin oxide(ITO) nano-polycrystalline powders were prepared by ultrasonic spray pyrolysis(USP) method using a precursor solution of indium and tin chlorides in a simple one-step process without any post-heat treatment,additives and other complex operations.The morphology and crystal structure of ITO powders were studied by thermogravimetric and differential thermal analysis(TG-DTA),X-ray diffraction(XRD),energy-dispersive spectrometer(EDS),scanning electron microscopy(SEM),laser particle size analyzer(LPSA),transmission electron microscope(TEM),high-resolution transmission electron microscopy(HRTEM) and selected area electron diffraction(SAED),respectively.The results indicate that pure cubic ITO solid solution could be obtained at and above the pyrolysis temperature of 600℃.Through adjusting the size of atomized precursor droplets,the particles with regular spherical shape and smooth surface are also obtained.The spherical particles have a narrow size distribution with a dominant diameter size in the range of 0.52-1.28 μm,and the average value is 1.01 μm.The clear lattice fringes in HRTEM image confirm a polycrystalline structure of ITO particles with the growth direction along(222) direction.

关键词： indium tin oxide Ultrasonic spray pyrolysis Nano-polycrystalline powder Chloride precursor

Electrophoretic deposition of a supercapacitor electrode of activated carbon onto an indium-tin-oxide substrate using ethyl cellulose as a binder

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Journal of Materials Science & Technology 2020年第23期58卷 188-196页

作者： Taeuk Kim Seong-Hoon Yi Sang-Eun Chun School of Materials Science and Engineering Kyungpook National UniversityDaegu 41566Republic of Korea

A transparent energy storage device is an essential component for transparent electronics.The increasing demand for high-power devices stimulates the development of transparent supercapacitors with high power density.A transparent electrode for such supercapacitors can be assembled via the electrophoretic deposition of an active material powder with a binder onto a transparent substrate.The properties of the binder critically influence the electrochemical behavior and performance of the resulting electrode.Ethyl cellulose(EC)is known as an eco-friendly,transparent,flexible,and inexpensive material.Here,we fabricated an electrode film with EC binder via electrophoretic deposition on an indium tin oxide(ITO)substrate instead of using the conventional polytetrafluoroethylene(PTFE)binder.The assembled electrodes with EC and PTFE were compared to investigate the feasibility of EC as a binder from different perspectives,including homogeneity,wettability,electrochemical behavior,and mechanical stability.The EC enabled the formation of a homogeneous film composed of smaller particles and with a higher specific capacitance compared with films prepared with PTFE.The annealing improved the adhesion strength of the EC because of its glass transition;however,its hydrophobic nature limited utilization of the active material for charge storage.Subsequent electrochemical activation improved the wettability of the electrode,resulting in an increased capacitance of 60 F g^(-1).Furthermore,even with the lower wettability of EC compared with that of PTFE,better rate performance was possible with the EC electrode.The increased mechanical stability after the annealing process ensured an excellent cycle life of 95%capacitance retention for 15,000 cycles.

关键词： Electrophoretic deposition Transparent electrode Activated carbon Ethyl cellulose indium tin oxide

Fabrication and Significant Photoelectrochemical Activity of Titania Nanotubes Modified with Thin indium tin oxide Film

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Acta Metallurgica Sinica(English Letters) 2017年第12期30卷 1210-1220页

作者： Katarzyna Siuzdak Mariusz Szkoda Jakub Karczewski Jacek Ryl Kazimierz Darowicki Katarzyna Grochowska Centre for Plasma and Laser Engineering The Szewalski Institute of Fluid-Flow Machinery Polish Academy of Sciences Fiszera 14 80-231 Gdansk Poland Department of Chemistry and Technology of Functional Materials Chemical Faculty Gdańsk University of Technology Narutowicza 11/12 80-233 Gdansk Poland Faculty of Applied Physics and Mathematics Gdansk University of Technology Narutowicza 11/12 80-233 Gdafisk Poland Department of Electrochemistry Corrosion and Materials Engineering Gdansk University of Technology Narutowicza 11/12 80-233 Gdafisk Poland

Ordered titanium dioxide nanotubes （TiOaNTs） modified with indium tin oxide （ITO） films were obtained via magnetron sputtering, in which ITO plate was used as a target, onto the as-anodized titania support followed by the calcination process. The morphology of fabricated material with deposited oxide was investigated using scanning electron microscopy. Raman and UV-Vis spectroscopies were utilized to characterize crystalline phase and optical properties of prepared samples, whereas X-ray photoelectron spectroscopy allowed determining the binding energy of present elements. In the case of titanium, three various oxidation states were identified and also the presence of indium and tin was confirmed. The electrochemical test carried out when the sample was exposed to light allows for selection of the most photoactive material. The highest photocurrent was registered when only 5-nm ITO layer was sputtered, and it equals 256 and 133 μA cm^-2 for the electrode material immersed in 0.5 M KOH and K2SO4 electrolytes, respectively, that is accordingly 3.5 and 4.4 times higher than the one observed for pristine titania. Furthermore, ITO-modified titania exhibits excellent photostability upon prolonged illumination that is of key importance for possible application in light-driven processes.

关键词： Titania nanotubes indium tin oxide Photoactivity Anodization Magnetron sputtering Electrochemical activity

Optimization of Sputtering Parameters for the Deposition of Low Resistivity indium tin oxide Thin Films

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Acta Metallurgica Sinica(English Letters) 2014年第2期27卷 324-330页

作者： Navid Yasrebi Behrang Bagheri Payam Yazdanfar Bizhan Rashidian Pezhman Sasanpour Department of Electrical Engineering Sharif University of Technology Department of Medical Physics and Biomedical Engineering Faculty of MedicineShahid Beheshti University of Medical Sciences

indium tin oxide （ITO） thin films have been deposited using RF sputtering technique at different pressures, RF powers, and substrate temperatures. Variations in surface morphology, optical properties, and film resistances were measured and analyzed. It is shown that a very low value of sheet resistance （1.96 Ω/sq.） can be achieved with suitable arrangement of the deposition experiments. First, at constant RF power, deposition at different pressure values is done, and the condition for achieving minimum sheet resistance （26.43 Ω/sq.） is found. In the next step, different values of RF powers are tried, while keeping the pressure fixed on the previously found minimum point （1-2 Pa）. Finally, the minimum resistivity is obtained by sweeping the substrate temperatures, while keeping RF power and the working pressure at their optimum values. Furthermore, the effects of process parameters on properties, such as the surface morphology and the optical transmission, are discussed. Although the point of minimum resistivity does not coincide with that of the maximum transparency of ITO film, relatively acceptable values of transmittance （approximately 75% on a glass substrate with intrinsic transparency of 89%） can be obtained.

关键词： indium tin oxide Sputtering Deposition Parameters optimization

Work Function Optimization Technology of indium tin oxide Films

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Journal of Harbin Institute of Technology(New Series) 2021年第4期28卷 33-39页

作者： Bo Zhang Zhibo Zhang Xintao Guo Ya’nan Yang Ying Liu Lei Yang Jiaqi Zhu Department of Materials Research AVIC Manufacturing Technology InstituteBeijing 100024China National Key Laboratory of Science and Technology on Advanced Composite in Special Environments Harbin Institute of TechnologyHarbin 150001China Center of Analysis and Measurement Harbin Institute of TechnologyHarbin 150001China

indium tin oxide(In_(2)O_(3)∶Sn)film is one of the most potential materials in the field of semiconductor industry.However,untreated In2O3∶Sn film has a low work function which can result in a high energy barrier that hinders the passage of carriers through the interface,thus leading to poor overall performance of directly prepared devices.In this study,crystalline transparent conductive In_(2)O_(3)∶Sn films were prepared by plasma exposure assisted magnetron sputtering under room temperature.Based on multiple testing methods,it can be found that the low temperature crystallization characteristics of In_(2)O_(3)∶Sn film were enhanced and the work function was effectively improved after Ar^(+)plasma exposure.The increase of the work function of In_(2)O_(3)∶Sn film was due to the increment of Sn⁃O bond on the surface brought by the transition from low oxidation state Sn^(2+)to high oxidation state Sn^(4+)under the action of high exposure.

关键词： work function indium tin oxide low temperature crystallization plasma exposure

Influence of Annealing Temperature on the Microstructure and Electrical Properties of indium tin oxide Thin Films

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Acta Metallurgica Sinica(English Letters) 2014年第2期27卷 368-372页

作者： Yinzhi Chen Hongchuan Jiang Shuwen Jiang Xingzhao Liu Wanli Zhang Qinyong Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China School of Material Science and Engineering Xihua University

indium tin oxide （ITO） thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering. The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 ℃ for 1 h. The influences of the annealing temperature on the microstructure and electrical properties of the ITO thin films were investigated, and the results indicate that the as-deposited ITO thin films are amorphous in nature. All samples were crystallized by annealing at 500 ~C. As the annealing temperature increases, the predominant orientation shifts from （222） to （400）. The carrier concentration decreases initially and then increases when the annealing temperature rises beyond 1,000 ℃. The resistivity of the ITO thin films increases smoothly as the annealing temperature increases to just below 900 ℃. Beyond 900 ℃, however, the resistivity of the films increases sharply. The annealing temperature has a significant effect on the stability of the ITO/Pt thin film thermocouples （TFTCs）. TFTCs annealed at 1,000 ℃ show improved high- temperature stability and Seebeck coefficients of up to 77.73 pV/℃.

关键词： indium tin oxide Thin film Annealing treatment

Work Function Enhancement of indium tin oxide via Oxygen Plasma Immersion Ion Implantation

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Plasma Science and Technology 2013年第8期15卷 791-793页

作者：高欢忠何龙何志江李泽斌吴忠航成卫海艾畦范晓轩区琼荣梁荣庆 Department of Illuminating Engineering and Light Sources Institute for Electric Light SourcesFudan University

indium tin oxide （ITO） transparent conducting film was treated with oxygen plasma immersion ion implantation （PIII）. X-ray photoelectron spectroscopy （XPS） was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.

关键词： plasma immersion ion implantation surface treatment work function indium tin oxide

Enhanced performance in organic photovoltaic devices with a KMnO_4 solution treated indium tin oxide anode modification

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Chinese Physics B 2012年第12期21卷 526-530页

作者：杨倩倩赵谡玲徐征张福俊闫光孔超樊星张妍斐徐叙瑢 Key Laboratory of Luminescence and Optical Information(Beijing Jiaotong University) Ministry of Education Institute of Optoelectronics Technology Beijing Jiaotong University

The properties of poly（3-hexylthiophene）：（6,6）-phenyl C61 butyric acid methyl ester （P3HT：PCBM） organic pho- tovoltaic devices （OPVs） with an indium tin oxide （ITO） anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency （PCE） of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO4, and then the charge collection efficiency is improved.

关键词： organic photovoltaic devices indium tin oxide anode modification KMnO4