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Spin-orbit coupling effects on the in-plane optical anisotropy of semiconductor quantum wells

Chinese Physics B 2014年第1期23卷 458-465页

作者：俞命玲陈涌海赖云锋程树英 College of Physics and Information Engineering and Institute of Micro/Nano Devices and Solar Cells Fuzhou University Fuzhou 350108 China Key Labora tory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

We theoretically study the influence of the spin–orbit coupling(SOC) on the in-plane optical anisotropy(IPOA) induced by in-plane uniaxial strain and interface asymmetry in(001) GaAs/AlGaAs quantum wells(QWs) with different well width. It is found that the SOC has more significant impact on the IPOA for the transition of the first valence subband of heavy hole to the first conduction band(1H1E) than that of 1L1E. The reason has been discussed. The IPOA of(001) InGaAs/InP QWs has been measured by reflectance difference spectroscopy, whose amplitude is about one order larger than that of GaAs/AlGaAs QWs. The anisotropic interface potential parameters of InGaAs/InP QWs are also determined. The influence of the SOC effect on the IPOA of InGaAs/InP QWs when the QWs are under tensile, compressive or zero biaxial strain are also investigated in theory. Our results demonstrate that the SOC has significant effect on the IPOA especially for semiconductor QWs with small well width, and therefore cannot be ignored.

关键词： spin–orbit coupling in-plane optical anisotropy InGaAs/InP quantum well GaAs/AlGaAs quantum well

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Strong in-plane optical anisotropy in 2D van der Waals antiferromagnet VOCl

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Nano Research 2023年第5期16卷 7481-7488页

作者： Tianle Zhang Jiantao Du Wenjun Wang Keming Wu Shuai Yue Xinfeng Liu Wanfu Shen Chunguang Hu Minghui Wu Zhe Qu Shengxue Yang Chengbao Jiang School of Materials Science and Engineering Beihang UniversityBeijing 100191China Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field Laboratory Chinese Academy of SciencesHefei 230031China Science Island Branch of Graduate School University of Science and Technology of ChinaHefei 230026China CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Precision Measuring Technology and Instruments Tianjin UniversityTianjin 300072China College of Materials and Chemical Engineering MinJiang UniversityFuzhou 350108China Fujian Key laboratory of Functional marine Sensing materials Minjiang UniversityFuzhou 350108China

Two-dimensional(2D)van der Waals(vdW)magnetic materials with strong in-plane anisotropy can make possible novel applications such as optospintronics and strain *** this work,the strong in-plane optical anisotropy in 2D vdW antiferromagnet VOCl has been systematically *** optical brightness and absorption coefficient exhibit evident periodic variation with the change of incident polarization,unveiling the strong in-plane anisotropic optical *** Raman intensity in this material shows obvious dependence on the polarization angle of incident laser,demonstrating that the phonon properties possess strong in-plane ***,we have also realized in-situ visualization of in-plane optical reflection anisotropy in this ***,the strong second harmonic generation(SHG)signal can only be detected when the incident polarization is along specific in-plane crystal orientations,illustrating the presence of strong in-plane nonlinear optical *** findings will benefit the applications of VOCl in the field of polarization-dependent electronics and spintronics.

关键词： two-dimensional material vanadium oxide chloride in-plane optical anisotropy linear dichroism nonlinear optics

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Giant in-plane optical anisotropy of a-plane ZnO on r-plane sapphire

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Journal of Semiconductors 2013年第12期34卷 17-20页

作者：武树杰陈涌海秦旭东高寒松俞金玲朱来攀李远时凯 Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of SemiconductorsChinese Academy of Sciences

We have measured the in-plane optical anisotropy （IPOA） of （1120） ZnO （a-plane） on （10]-2） sapphire （r-plane） by reflectance difference spectroscopy （RDS） at room temperature. Giant IPOA has been observed be- tween the light polarized direction parallel and perpendicular to the c axis of ZnO, since the symmetry of a-plane is C2v. A sharp resonance has been observed near the fundamental band gap, which is induced by the polarization- depend band gap shift. The sharp line shape is attributed to the exciton transition. The spectra fitting and differential spectra indicate the polarization-depend band energies. The giant IPOA is possible enhanced by anisotropy strain along and perpendicular to the c axis in the a-plane.

关键词： ZnO in-plane optical anisotropy reflectance difference spectroscopy

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