Giant in-plane optical anisotropy of a-plane ZnO on r-plane sapphire

作     者：武树杰 陈涌海 秦旭东 高寒松 俞金玲 朱来攀 李远 时凯 

作者机构：Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第12期

页      面：17-20页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the State Key Development Program for Basic Research of China(Nos.2013CB619306,2012CB921304) the National Natural Science Foundation of China(No.60990313) the National High Technology Research and Development Program of China(No.2011AA03A101) 

主　　题：ZnO in-plane optical anisotropy reflectance difference spectroscopy 

摘      要：We have measured the in-plane optical anisotropy （IPOA） of （1120） ZnO （a-plane） on （10]-2） sapphire （r-plane） by reflectance difference spectroscopy （RDS） at room temperature. Giant IPOA has been observed be- tween the light polarized direction parallel and perpendicular to the c axis of ZnO, since the symmetry of a-plane is C2v. A sharp resonance has been observed near the fundamental band gap, which is induced by the polarization- depend band gap shift. The sharp line shape is attributed to the exciton transition. The spectra fitting and differential spectra indicate the polarization-depend band energies. The giant IPOA is possible enhanced by anisotropy strain along and perpendicular to the c axis in the a-plane.