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hydrogen-induced marginal growth model for the synthesis of graphene by arc discharge

Science China(Technological Sciences) 2021年第5期64卷 1074-1080页

作者： ZHANG Da YE Kai LIANG Feng DAI YongNian Faculty of Metallurgical and Energy Engineering Kunming University of Science and TechnologyKunming 650093China State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization Kunming University of Science and TechnologyKunming 650093China

High-quality graphene is prepared by arc discharge with low cost under hydrogen atmosphere. However, the growth mechanism of graphene synthesis by arc discharge remains unclear. In this paper, the hydrogen-induced marginal growth(HIMG) model is deduced to study the growth mechanism of graphene by combining experiment with numerical simulation results. First, the characteristics of thick edges and thin middle and containing hydrogen are verified by transmission electron microscopy and Raman spectroscopy, respectively. In addition, numerical simulation provides the chemical species and temperature range of graphene growth. Second, the marginal growth pattern of hydrogen transfer and carbon addition is introduced because the C–H and C–C reduce configuration energy and island energy, respectively. Meanwhile, the stacking growth at the margin of the graphene island leads to the longitudinal growth of graphene because of the Van der Waals force and the effect of self-assembly,increasing the number of graphene layers. Finally, graphene sheets with a small amount of hydrogen are deposited on the inner wall after annealing. The investigation of the growth mechanism of graphene under hydrogen atmosphere lays a foundation for the large-scale preparation of graphene by arc discharge.

关键词： hydrogen graphene growth mechanism hydrogen-induced marginal growth model arc discharge

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