Hydrogen-induced marginal growth model for the synthesis of graphene by arc discharge

作     者：ZHANG Da YE Kai LIANG Feng DAI YongNian ZHANG Da;YE Kai;LIANG Feng;DAI YongNian

作者机构：Faculty of Metallurgical and Energy EngineeringKunming University of Science and TechnologyKunming 650093China State Key Laboratory of Complex Nonferrous Metal Resources Clean UtilizationKunming University of Science and TechnologyKunming 650093China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2021年第64卷第5期

页      面：1074-1080页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：supported by the National Natural Science Foundation of China (Grant Nos.11765010 and 51704136) the National Key Research and Development Program of China (Grant No.2019YFC1907900) the Freely Exploring Fund for Academicians in Yunnan Province (Grant No.2018HA006) the Science Research Fund of Education Department in Yunnan Province (Grant No.2019Y0031) 

主　　题：hydrogen graphene growth mechanism hydrogen-induced marginal growth model arc discharge 

摘      要：High-quality graphene is prepared by arc discharge with low cost under hydrogen atmosphere. However, the growth mechanism of graphene synthesis by arc discharge remains unclear. In this paper, the hydrogen-induced marginal growth(HIMG) model is deduced to study the growth mechanism of graphene by combining experiment with numerical simulation results. First, the characteristics of thick edges and thin middle and containing hydrogen are verified by transmission electron microscopy and Raman spectroscopy, respectively. In addition, numerical simulation provides the chemical species and temperature range of graphene growth. Second, the marginal growth pattern of hydrogen transfer and carbon addition is introduced because the C–H and C–C reduce configuration energy and island energy, respectively. Meanwhile, the stacking growth at the margin of the graphene island leads to the longitudinal growth of graphene because of the Van der Waals force and the effect of self-assembly,increasing the number of graphene layers. Finally, graphene sheets with a small amount of hydrogen are deposited on the inner wall after annealing. The investigation of the growth mechanism of graphene under hydrogen atmosphere lays a foundation for the large-scale preparation of graphene by arc discharge.