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Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs

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Chinese Physics B 2011年第11期20卷 346-352页

作者：陈建军陈书明梁斌何益百池雅庆邓科峰 School of Computer Science National University of Defense Technology

Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose （TID） effect. However, their capability of resisting the hot carrier effect （HCE） has also been proven to be very weak. In this paper, the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail, and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation. The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology. In addition, the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers （the annular source nMOSFETs） are also studied to provide a possible alternative for the designers.

关键词： annular gate nMOSFETs total ionizing dose effect hot carrier effect annular sourcenMOSFETs

A review on plasmonic enhancement of activity and selectivity in electrocatalytic CO_(2)reduction

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Frontiers in Energy 2024年第4期18卷 399-417页

作者： Jing XUE Zhenlin CHEN Yuchao ZHANG Jincai ZHAO Key Laboratory of Photochemistry Beijing National Laboratory for Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China

Utilizing plasmonic effects to assist electrochemical reactions exhibits a huge potential in tuning the reaction activities and product selectivity,which is most appealing especially in chemical reactions with multiple products,such as CO_(2)reduction reaction(CO_(2)RR).However,a comprehensive review of the development and the underlying mechanisms in plasmon-assisted electrocatalytic CO_(2)RR remains few and far ***,the fundamentals of localized surface plasmonic resonance(LSPR)excitation and the properties of typical plasmonic metals(including Au,Ag,and Cu)are ***,the potential mechanisms of plasmonic effects(such as hot carrier effects and photothermal effects)on the reaction performance in the field of plasmon-assisted electrocatalytic CO_(2)RR are summarized,which provides directions for the future development of this *** is concluded that plasmonic catalysts exhibit potential capabilities in enhancing CO_(2)RR while more in situ techniques are essential to further clarify the inner mechanisms.

关键词： localized surface plasmonic resonance(LSPR)effect plasmonic metals CO_(2)reduction reaction(CO_(2)RR) hot carrier effect photothermal effect

Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

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Journal of Semiconductors 2010年第8期31卷 78-83页

作者：李劲刘红侠李斌曹磊袁博 Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian University

For the first time,a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator（DMG SSOI） MOSFETs is *** investigate the improved short channel effect（SCE）,hot carrier effect（HCE）,drain-induced barrier-lowering（DIBL） and carrier transport efficiency for the novel structure *** analytical model takes into account the effects of different metal gate lengths,work functions,the drain bias and Ge mole fraction in the relaxed SiGe *** surface potential in the channel region exhibits a step potential,which can suppress SCE,HCE and ***,strained-Si and SOI structure can improve the carrier transport efficiency,with strained-Si being particularly ***, the threshold voltage model correctly predicts a＂rollup＂in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe *** validity of the two-dimensional analytical model is verified using numerical simulations.

关键词： SOI MOSFETs strained-Si dual-material gate short channel effect hot carrier effect the drain-induced barrier-lowering two-dimensional model

A compact I-V model for lightly-doped-drain MOSFETs

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Chinese Physics B 2004年第7期13卷 1104-1109页

作者：于春利杨林安郝跃 InstituteofMicroelectronics XidianUniversityXi'an710071China

A novel model for lightly-doped-drain (LDD) MOSFETs is proposed, which utilizes the empirical hyperbolic tangent function to describe the I－V characteristics. The model includes the strong inversion and subthreshold mechanism, and shows a good prediction for submicron LDD MOSFET. Moreover, the model requires low computation time consumption and is suitable for design of MOSFETs devices and circuits.

关键词： lightly-doped-drain MOSFET hot carrier effect velocity saturation hyperbolic tangent

A Novel Empirical Model of I-V Characteristics for LDD MOSFET Including Substrate Current 

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Journal of Semiconductors 2004年第7期25卷 778-783页

作者：于春利郝跃杨林安西安电子科技大学微电子研究所西安710071

A compact model for LDD MOSFET is proposed,which involves the hyperbolic tangent function description and the physics of device with emphasis on the substrate current *** simulation results demonstrate good agreement with measurement,and show that deep submicron LDD MOSFET has larger substrate current than submicron device *** improved model costs low computation consumption,and is effective in manifestation of hot carrier effect and other effects in deep submicron devices,in turn is suitable for design and reliability analysis of scaling down devices.

关键词： LDD MOSFET substrate current hot carrier effect deep submicron