Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs

作     者：陈建军 陈书明 梁斌 何益百 池雅庆 邓科峰 

作者机构：School of Computer ScienceNational University of Defense Technology 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2011年第20卷第11期

页      面：346-352页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the Key Program of the National Natural Science Foundation of China(Grant No.60836004) the National Natural Science Foundation of China(Grant Nos.61006070 and 61076025) 

主　　题：annular gate nMOSFETs total ionizing dose effect hot carrier effect annular sourcenMOSFETs 

摘      要：Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose （TID） effect. However, their capability of resisting the hot carrier effect （HCE） has also been proven to be very weak. In this paper, the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail, and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation. The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology. In addition, the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers （the annular source nMOSFETs） are also studied to provide a possible alternative for the designers.