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Theoretical study of the SiO_2/Si interface and its effect on energy band profile and MOSFET gate tunneling current

Journal of Semiconductors 2010年第8期31卷 11-15页

作者：朱晖文刘咏松毛凌峰沈静琴朱志艳唐为华 Department of Physics Center for Optoelectronics Materials and DevicesZhejiang Sci-Tech University School of Electronics & Information Engineering Soochow University(Suzhou)

Two SiO_2/Si interface structures,which are described by the double bonded model（DBM） and the bridge oxygen model（BOM）,have been theoretically studied via first-principle ***-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by *** a difference will result in a difference in the gate leakage current. tunneling current calculation demonstrates that the SiO_2/Si interface structure described by DBM leads to a larger gate leakage current.

关键词： interface MOSFETs gate tunneling current

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gate current modeling and optimal design of nanoscale non-overlapped gate to source/drain MOSFET

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Journal of Semiconductors 2011年第7期32卷 14-19页

作者： Ashwani K.Rana Narottam Chand Vinod Kapoor Department of Electronics and Communication National Institute of Technology Department of Computer Science and Engineering National Institute of Technology

A novel nanoscale MOSFET with a source/drain-to-gate non-overlapped and high-k spacer structure has been demonstrated to reduce the gate leakage current for the first *** gate leakage behaviour of the novel MOSFET structure has been investigated with the help of a compact analytical model and Sentaurus simulation. A fringing gate electric field through the dielectric spacer induces an inversion layer in the non-overlap region to act as an extended S/D（source/drain） *** is found that an optimal source/drain-to-gate non-overlapped and high-A：spacer structure has reduced the gate leakage current to a great extent as compared to those of an overlapped ***,the proposed structure had improved off current,subthreshold slope and drain induced barrier lowering（DIBL） *** is concluded that this structure solves the problem of high leakage current without introducing extra series resistance.

关键词： gate tunneling current analytical model spacer dielectrics DIBL subthreshold slope

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