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Organic-semiconductor： Polymer-electret blends for high-performance transistors

Nano Research 2018年第11期11卷 5835-5848页

作者： Peng Wei Shengtao Li Dongfan Li Han Yu Xudong Wang Congcong Xu Yaodong Yang Laju Bu Guanghao Lu Frontier Institute of Science and Technology and State Key Laboratory of Electrical Insulation and Power Equipment Xi'an Jiaotong University Xi'an 7100S4 China School of Science Xi'an Jiaotong University Xi'an 710049 China

As compared with polymer semiconductors, solution-processed small-molecule semiconductors usually have poorer film-formation properties, which induces wide variations in device performance in terms of mobility and threshold voltage, thus severely limiting their commercial applications. In this work, we propose an easily accessible method to improve the performance and reduce the variability of small-molecule organic field-effect transistors (OFETs) by blending organic semiconductors with an insulator polymer, which is subsequently post-treated by gate stress to generate an electret. By blending the organic semiconductor 2,7-didodecyl[1]benzothieno[3,2-b][1]benzothiophene (C12-BTBT) with the insulator polystyrene, uniform transport layers with vertically phase segregated morphology are obtained, from which the mobility and threshold voltage of OFETs are largely manipulated. The OFETs exhibit field-effect mobilities as high as 7.5 cm2·V−1·s−1 with an on/off ratio exceeding 106 in ambient conditions. This double-layer structure provides an appropriate architecture for applying gate-stress to inject charges into the insulating layer, forming an electret. The generation of the electret is thermally accelerated and thus can be easily realized under moderate gate-stress at elevated temperature (e.g., 60 °C). After cooling, the electret layer serves as a floating-gate, which not only continuously tunes the threshold voltage and field-effect mobility, but also helps minimize the contact resistances and optimize the subthreshold swing. As an application of this method, a digital inverter is built and its performance is optimized via in situ tuning of its individual transistors.

关键词： organic field-effect transistors organic electronics vertical phase separation gate stress polymer electrets C 12 -BTBT

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Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology

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Chinese Physics B 2020年第12期29卷 419-423页

作者： Meihua Liu Zhangwei Huang Kuan-Chang Chang Xinnan Lin Lei Li Yufeng Jin School of Electronic and Computer Engineering Peking University Shenzhen Graduate SchoolShenzhen 518055China

The impact of supercritical CO2/H2O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors(MIS-HEMTs) is investigated. The MIS-HEMTs were placed in a supercritical fluid system chamber at 150℃ for 3 h. The chamber was injected with CO2 and H2O at pressure of 3000 psi(1 psi ≈ 6.895 kPa). Supercritical H2O fluid has the characteristics of liquid H2O and gaseous H2O at the same time, that is, high penetration and high solubility. In addition, OH-produced by ionization of H2O can fill the nitrogen vacancy near the Si3N4/GaN/AlGaN interface caused by high temperature process. After supercritical CO2/H2O treatment, the threshold voltage shift is reduced from 1 V to 0.3 V. The result shows that the threshold voltage shift of MIS-HEMTs could be suppressed by supercritical CO2/H2O treatment.

关键词： MIS-HEMTs threshold-voltage instability gate stress temperature influence

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