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Science China Materials 2023年第5期66卷 1978-1988页

作者：郑重明王玉坤胡建正郭世平梅洋龙浩应磊莹郑志威张保平 Department of Electronic Engineering Optoelectronics Engineering Research CenterSchool of Electronic Science and Engineering(National Model Microelectronics College)Xiamen UniversityXiamen 361005China Advanced Micro-Fabrication Equipment Inc. Shanghai 201201China

AlGaN基垂直腔面发射激光器(VCSEL)因其优越的材料性质和器件优点吸引了很多关注.然而,由于材料外延生长和器件制备工艺的局限,AlGaN基VCSEL制备很困难.本工作通过侧向外延生长技术制备了高质量的AlGaN多量子阱(MQWs)结构的外延片,并通... 详细信息

AlGaN基垂直腔面发射激光器(VCSEL)因其优越的材料性质和器件优点吸引了很多关注.然而,由于材料外延生长和器件制备工艺的局限,AlGaN基VCSEL制备很困难.本工作通过侧向外延生长技术制备了高质量的AlGaN多量子阱(MQWs)结构的外延片,并通过X射线衍射(XRD)和光致发光(PL)实验对外延片进行了分析.XRD测量显示,外延片中的AlN模板层几乎是弛豫的,刃位错密度为10^(9)cm^(-2).随后,生长的AlGaN/AlN超晶格(SL)层被用来减少刃位错密度,使得量子阱中的位错密度为10^(8)cm^(-2).根据PL测试结果,MQWs的内量子效率(IQE)为62%,且在室温下的发光以辐射复合为主.通过激光剥离(LLO)和化学机械抛光(CMP)技术,将这些外延片制备成UVC VCSEL.经过这些工艺,MQWs的晶体质量没有受到影响,还在抛光之后的表面观察到了UVC波段的受激辐射.这些AlGaN基UVC VCSEL在275.91,276.28和277.64 nm实现了激射,最小激射阈值为0.79 MW cm^(-2).

关键词： AlGaN vertical-cavity surface-emitting lasers epitaxial lateral overgrowth laser lift-off UVC

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Growth of Strain Free GaN Layers on （0001） Oriented Sapphire by Using Quasi-Porous GaN Template

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Chinese Physics Letters 2006年第6期23卷 1619-1622页

作者：解新建钟飞邱凯刘贵峰尹志军王玉琦李新华姬长建韩奇峰陈家荣曹先存 Key Laboratory of Material Physics Institute of Solid State Physics Chinese Academy of Sciences Hefei 230031

We report the reduced-strain gallium-nitride （GaN） epitaxial growth on （0001） oriented sapphire by using quasiporous GaN template. A GaN film in thickness of about 1 μm was initially grown on a （0001） sapphire substrate by molecular beam epitaxy. Then it was dealt by putting into 45% NaOH solution at 100℃ for lOmin. By this process a quasi-porous GaN film was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050℃ in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.

关键词： epitaxial lateral overgrowth VAPOR-PHASE EPITAXY MBE GROWTH SI(111) MOVPE SUBSTRATE SILICON

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Study of the morphology evolution of AlN grown on nanopatterned sapphire substrate

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Journal of Semiconductors 2019年第12期40卷 130-134页

作者： Zhuohui Wu Jianchang Yan Yanan Guo Liang Zhang Yi Lu Xuecheng Wei Junxi Wang Jinmin Li Research and Development Center for Solid State Lighting Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application Beijing 100083China State Key Laboratory of Solid-State Lighting Beijing 100083China

This study focused on the evolution of growth front about AlN growth on nano-patterned sapphire substrate by metal-organic chemical vapor deposition.The substrate with concave cones was fabricated by nano-imprint lithography and wet etching.Two samples with different epitaxy procedures were fabricated,manifesting as two-dimensional growth mode and three-dimensional growth mode,respectively.The results showed that growth temperature deeply influenced the growth modes and thus played a critical role in the coalescence of AlN.At a relatively high temperature,the AlN epilayer was progressively coalescence and the growth mode was two-dimensional.In this case,we found that the inclined semi-polar facets arising in the process of coalescence were{112^-1}type.But when decreasing the temperature,the{112^-2}semi-polar facets arose,leading to inverse pyramid morphology and obtaining the three-dimensional growth mode.The 3 D inverse pyramid AlN structure could be used for realizing 3 D semi-polar UV-LED or facet-controlled epitaxial lateral overgrowth of AlN.

关键词： AlN epitaxial lateral overgrowth growth front evolution 2D and 3D growth modes MOCVD

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Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching

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Chinese Physics Letters 2006年第8期23卷 2243-2246页

作者：于乃森郭丽伟陈弘邢志刚王晶朱学亮彭铭曾颜建锋贾海强周均铭 State Key Laboratory for Surface Physics Institute of Physics Chinese Academy of Sciences Beijing 100080

InGaN/GaN multiple quantum wells （MQWs） are grown on planar and maskless periodically grooved sapphires by metal organic vapour phase epitaxy （MOCVD）. High-resolution x-ray rocking curves and transmission electron microscopy （TEM） are adopted to characterize the film quality. Compared with the MQWs grown on planar sapphire, the sample grown on grooved sapphire shows better crystalline quality： a remarkable reduction of dislocation densities is achieved. Meanwhile, the MQWs grown on grooved sapphire show two times larger PL intensity at room temperature. Temperature-dependent PL measurements are adopted to investigate the luminescence properties. The luminescence thermal quenching based on a fit to the Arrhenius plot of the normalized integrated PL intensity over the measured temperature range suggests that the nonradiative recombination centres （NRCs） are greatly reduced for the sample grown on grooved sapphire. We assume that the reduction of dislocations which act as NRCs is the main reason for the sample grown on pattern sapphire having higher PL intensity.

关键词： epitaxial lateral overgrowth MOLECULAR-BEAM EPITAXY GAN FILMS VAPOR-DEPOSITION PHOTOLUMINESCENCE DEFECTS SI(111) SINGLE LAYERS

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Improving the Light Extraction Efficiency of GaN-Based Light-Emitting Diode

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World Journal of Engineering and Technology 2021年第2期9卷 300-308页

作者： Lianjun Zhang Zhongqi Fan Gang Liu Computer College Shandong University of Technology Zibo China

The light extraction efficiency caused by total internal reflection is low. Based on the analysis of the existing technology, a new design scheme is proposed in this paper to improve the light extraction efficiency. The air gap photonic crystal is embedded on the GaN-based patterned sapphire substrate, which can reduce line misalignment and improve light extraction efficiency. The internal structure of the GaN-based LED epitaxial layer is composed of an electron emission layer, a quantum well in the light-emitting recombination region, and an electron blocking layer. Experimental results show that this method significantly improves the extraction efficiency of LED light.

关键词： Light Emitting Diodes Light Extraction Efficiency Photonic Crystals epitaxial lateral overgrowth

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