Improving the Light Extraction Efficiency of GaN-Based Light-Emitting Diode
Improving the Light Extraction Efficiency of GaN-Based Light-Emitting Diode作者机构：Computer College Shandong University of Technology Zibo China
出 版 物：《World Journal of Engineering and Technology》 (世界工程和技术（英文）)
年 卷 期：2021年第9卷第2期
页 面：300-308页
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
主 题：Light Emitting Diodes Light Extraction Efficiency Photonic Crystals Epitaxial Lateral Overgrowth
摘 要：The light extraction efficiency caused by total internal reflection is low. Based on the analysis of the existing technology, a new design scheme is proposed in this paper to improve the light extraction efficiency. The air gap photonic crystal is embedded on the GaN-based patterned sapphire substrate, which can reduce line misalignment and improve light extraction efficiency. The internal structure of the GaN-based LED epitaxial layer is composed of an electron emission layer, a quantum well in the light-emitting recombination region, and an electron blocking layer. Experimental results show that this method significantly improves the extraction efficiency of LED light.
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