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Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

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Journal of Semiconductors 2010年第12期31卷 43-48页

作者：周海亮郝跃张民选 School of Computer National University of Defense Technology School of Microelectronics Xidian University

Due to carrier band-to-band-tunneling （BTBT） through channel-source/drain contacts, conventional MOS- like Carbon Nanotube Field Effect Transistors （C-CNFETs） suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green＇s function （NEGF） formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold perfor- mance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application.

关键词： sub-threshold slope ambipolar conductance electrostatic doping BTBT Schottky contact CNFET

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Lead halide perovskite sensitized WSe_(2) photodiodes with ultrahigh open circuit voltages

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eLight 2023年第1期3卷 188-197页

作者： Sung-Joon Lee Hung-Chieh Cheng Yiliu Wang Boxuan Zhou Dehui Li Gongming Wang Yuan Liu Jian Guo Hao Wu Dae Joon Kang Yu Huang Xiangfeng Duan Department of Materials Science and Engineering University of CaliforniaLos AngelesCAUSA Department of Physics Sungkyunkwan UniversitySuwonRepublic of Korea Department of Chemistry and Biochemistry University of CaliforniaLos AngelesCAUSA Present Address:Materials Science and Technology Division U.S.Naval Research LaboratoryWashingtonDCUSA

Two-dimensional semiconductors(2DSCs)have attracted considerable interests for optoelectronic devices,but are often plagued by the difficulties in tailoring the charge doping type and poor optical absorption due to their atomically thin ***,we report a methylammonium lead iodide perovskite(CH_(3)NH_(3)PbI_(3))/2DSC heterojunction device,in which the electric-field controllable ion migration in the perovskite layer is exploited to induce reversible electron-and hole-doping effects in the underlying monolayer tungsten diselenide(WSe_(2))to form a programmable p-n *** the same time,the CH_(3)NH_(3)PbI_(3) layer functions as a highly efficient sensitization layer to greatly boost the optical absorption and external quantum efficiency(EQE)of the resulting *** asymmetrically poling the perovskite layer,gold-contacted CH_(3)NH_(3)PbI_(3)/WSe_(2) devices show a switchable open circuit voltage up to 0.78 V,along with a high EQE of 84.3%.The integration of tunable graphene-contacts further improves the photodiode performance to achieve a highest open circuit voltage of 1.08 V and a maximum EQE of 91.3%,greatly exceeding those achieved previously in 2DSC lateral *** studies establish a non-invasive approach to switch optoelectronic functions and open up a new avenue toward high-performance reconfigurable optoelectronic devices from 2DSCs.

关键词： electrostatic doping Programmable optoelectronic devices Lead halide perovskite Two-dimensional

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Edge induced band bending in van der Waals heterojunctions:A first principle study

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Nano Research 2020年第3期13卷 701-708页

作者： Yang Ou Zhuo Kang Qingliang Liao Zheng Zhang Yue Zhang Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Advanced Energy Materials and TechnologiesUniversity of Science and Technology BeijingBeijing 100083China State Key Laboratory for Advanced Metals and Materials School of Materials Science and EngineeringUniversity cf Science and Technology BeijingBeijing 100083China

The dangling bond free nature of two-dimensional(2D)material surface/interface makes van der Waals(vdW)heterostructure attractive for novel electronic and optoelectronic *** in practice,edge is unavoidable and could cause band bending at 2D material edge analog to surface/interface band bending in conventional three-dimensional(3D)***,we report a first principle simulation on edge band bending of free standing MoS2/WS2 vdW *** to the imbalance charges at edge,S terminated edge causes upward band bending while Mo/W terminated induces downward bending in undoped *** edge band bending is comparable to band gap and could obviously harm electronic and optoelectronic *** also investigate the edge band bending of electrostatic doped heterojunction.N doping raises the edge band whereas p doping causes a decline of edge *** n doping even reverses the downward edge band bending at Mo/W terminated *** contrast,heavy p doping doesn’t invert the upward bending to *** with former experiments,the expected band gap narrowing introduced by interlayer potential gradient at edge is not observed in our free-standing structures and suggests substrate’s important role in this imbalance charge induced phenomenon.

关键词： edge band bending imbalance charge electrostatic doping transition metal dichalcogenides(TMDCs)van der Waals(vdW)heterojunction first principle

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