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Controllable growth of wafer-scale PdS and PdS_(2) nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

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Journal of Semiconductors 2023年第12期44卷 64-71页

作者： Hui Gao Hongyi Zhou Yulong Hao Guoliang Zhou Huan Zhou Fenglin Gao Jinbiao Xiao Pinghua Tang Guolin Hao School of Physics and Optoelectronics and Hunan Institute of Advanced Sensing and Information Technology Xiangtan UniversityXiangtan 411105China College of Physics and Technology&Guangxi Key Laboratory of Nuclear Physics and Technology Guangxi Normal UniversityGuilin 541004China Department of electronic and Electrical Engineering University of SheffieldSheffield S102TNUK National Laboratory of Solid State Microstructures Nanjing UniversityNanjing 210093China

Palladium(Pd)-based sulfides have triggered extensive interest due to their unique properties and potential applications in the fields of electronics and optoelectronics.However,the synthesis of large-scale uniform PdS and PdS_(2)nanofilms(NFs)remains an enormous challenge.In this work,2-inch wafer-scale PdS and PdS_(2) NFs with excellent stability can be controllably prepared via chemical vapor deposition combined with electron beam evaporation technique.The thickness of the pre-deposited Pd film and the sulfurization temperature are critical for the precise synthesis of PdS and PdS_(2) NFs.A corresponding growth mechanism has been proposed based on our experimental results and Gibbs free energy calculations.The electrical transport properties of PdS and PdS_(2) NFs were explored by conductive atomic force microscopy.Our findings have achieved the controllable growth of PdS and PdS_(2) NFs,which may provide a pathway to facilitate PdS and PdS_(2) based applications for next-generation high performance optoelectronic devices.

关键词： PdS PdS_(2) nanofilms controllable growth chemical vapor deposition electron beam evaporation

Influences of annealing temperature on properties of Fe^2+:ZnSe thin films deposited by electron beam evaporation and their applications to Q-switched fiber laser

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Chinese Physics B 2020年第5期29卷 282-287页

作者：卿杜鑫王树同宁守贵张伟陈晓旭张弘冯国英周寿桓 Institute of Laser&Micro/Nano Engineering College of Electronics&Information EngineeringSichuan UniversityChengdu 610064China North China Research Institute of Electro-Optics Beijing 100015China

Fe^2+:ZnSe thin films are prepared on sapphire substrate at room temperature by electron beam evaporation and then annealed in vacuum(about 1×10^-4 Pa)at different temperatures.The influences of thermal annealing on the structural and optical properties of these films such as grain size and optical transmittance are investigated.The x-ray diffraction patterns show that the Fe2+:ZnSe thin film is preferred to be oriented along the(111)plane at different annealing temperatures.After the film is annealed,the full-width-at-half-maximum(FWHM)of the x-ray diffraction peak profile(111)of the film decreases and its crystal quality is improved.Scanning electron microscope images show that the films are more dense after being annealed.Finally,the sample is used as a saturable absorber in ZBLAN fiber laser.The annealed Fe^2+:ZnSe thin films can be used to realize stable Q-switching modulation on ZBLAN fiber laser.The results demonstrate that the Fe2+:ZnSe thin film is a promising material for generating the high-power pulses of mid-infrared Q-switched fiber lasers.

关键词： electron beam evaporation thin film optical materials Q-switching

Fe-doped ZnS film fabricated by electron beam evaporation and its application as saturable absorber for Er:ZBLAN fiber laser

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Chinese Physics B 2021年第7期30卷 289-293页

作者：杨久林冯国英卿杜鑫吴雅婕罗韵王建军 Institute of Laser&Micro/Nano Engineering College of Electronics and Information EngineeringSichuan UniversityChengdu 610064China Research Center of Laser Fusion China Academy of Engineering PhysicsMianyang 621900China

High-quality Fe-doped Zn S films have been fabricated by electron beam evaporation.After the doping,the fabricated films still maintain the preferential crystalline orientation and phase purity of the host Zn S.According to the observation of surface morphology,the root mean-square roughness of the samples increases slightly with the increase of doping content.All of the prepared samples are in cubic zinc blende structure of Zn S.Transmission spectrum confirms a more obvious dip near 3μm with higher dopant concentration and it can be attributed to the typical^(5)E→^(5)T_(2)transition of Fe^(2+).Fe-doped Zn S film is also successfully used for Q-switched Er:ZBLAN fiber laser.

关键词： Fe-doped ZnS film electron beam evaporation Q-switching Er:ZBLAN

Characterization of Nd:Y3Al5O12 thin films prepared by electron beam evaporation deposition

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Characterization of Nd:Y3Al5O12 thin films prepared by elect...

electron beam evaporated gold doped tungsten oxide nanostructured films for sensor applications

2012 China Functional Materials Technology and Industry Forum

作者： Hao Ren Qun Zeng Xihui Liang School of Information and Optoelectronic Science and Engineering South China Normal University

Nd:YAG thin films have been prepared on Si(100) substrates by electron beam evaporation deposition.The surface morphologies,crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction,scanning electron microscopy, photoluminescence spectroscopy,and spectrophotometer.The crystallization of Nd:YAG thin films was improved after annealing at 1100℃for 1 hour in vacuum.Excited by a Ti:sapphire laser at 808 nm,photoluminescence spectra of Nd:YAG thin films were measured at room temperature,and the transition of F→I of Nd in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

关键词： Nd:YAG thin film electron beam evaporation Photoluminescence

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ChemPhysMater 2023年第2期2卷 172-179页

作者： Adilakshmi Griddaluru Sivasankar Reddy Akepati Department of Physics Vikrama Simhapuri University CollegeAndhra PradeshKavali 524201India

Gas sensors play a vital role in monitoring environmental pollution for human health,safety,and the detection of various gasses in the environment.Nanostructured metal oxide thin films have been widely used in sensor applications owing to their unique properties.In this study,pure and gold(Au)doped nanostructured tungsten trioxide(WO_(3))films were deposited on glass substrates by electron beam evaporation at room temperature.The microstructure of the WO_(3) films changed from nanoflakes to nanorods upon variation of the wt%of Au.The sensing properties of WO_(3) based nanostructure films were measured using a computer-controlled system.The gas sensing results showed that the Au-doped WO_(3) films exhibited a higher sensitivity than the undoped films.The 15 wt%Au-doped WO_(3) nanostructure films showed high sensitivity towards ethanol and the response(sensitivity)value was 89.The response and recovery times for 15 wt%Au-doped WO_(3) were 8 and 10 s,respectively.

关键词： electron beam evaporation Tungsten oxide Gold Nanostructure Gas sensors

High quality non-rectifying contact of ITO with both Ni and n-type GaAs

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Journal of Semiconductors 2015年第5期36卷 14-18页

作者：王青松 Masao Ikeda 谭明代盼吴渊渊陆书龙杨辉 Key Laboratory Nano-Devices and Application Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences Nano Science and Technology Institute University of Science and Technology of China University of Chinese Academy of Sciences

We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model （c-TLM） method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81×10^-6 Ω.cm^2, while that oflTO/n-GaAs is 7×10^-5Ω.cm^2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.

关键词： ITO electron beam evaporation ITO/n-GaAs specific contact resistance

Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

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Journal of Semiconductors 2015年第12期36卷 38-41页

作者： Cholho Jang 叶志镇吕建国 State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Department of Materials Science Kim Il Sung University

Ga doped ZnO （GZO）/Cu grid double layer structures were prepared at room temperature （RT）. We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit （ФTC = 6.19 × 10^-3 Ω^-1） was obtained. In this case, the transmittance, resistivity and filling factor （FF） of the GZO/Cu grid double layer are 83.74%, 1.10 ×10^-4Ω.cm and 0.173, respectively.

关键词： transparent electrode electron beam evaporation Cu grid Ga doped ZnO

Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

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Chinese Physics B 2015年第10期24卷 599-603页

作者：吴绍航张楠胡永生陈红蒋大鹏刘星元 State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanicsand PhysicsChinese Academy of Sciences University of Chinese Academy of Sciences Key Laboratory of Optical System Advanced Manufacturing Technology Chinese Academy of Sciences

Strontium-zinc-oxide（SrZnO） films forming the semiconductor layers of thin-film transistors（TFTs） are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide（ZnO） with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.

关键词： thin-film transistor ZnO electron beam evaporation

Influence of deposition rate on the structural, optical and electrical properties of electron beam evaporated SnO_2 thin films for transparent conducting electrode applications

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Journal of Semiconductors 2018年第8期39卷 20-26页

作者： Nitin Kumar Bhawana Joshi K.Asokan Department of Applied Physics Gautam Buddha University Materials Science Division Inter University Accelerator Centre

The role of deposition rate in the structural, optical and electrical properties of SnOthin films deposited by electron beam evaporation method is investigated by varying the deposition powers viz. 50, 75, and 100 W.The structural characterization of the films is done by X-ray diffraction(XRD) technique. The surface morphology of the films is studied by scanning electron microscopy(SEM). Rutherford back scattering(RBS) measurements revealed the thickness of the films ranging from 200 nm to 400 and also a change in the concentration of oxygen vacancies which is found to be the maximum in the film deposited at the lowest deposition rate. Optical absorption spectrum is recorded using the UV–V is spectroscopy and the films are found to be transparent in nature. A shift in the absorption edge is observed and is attributed to a different level of allowed energy states in conduction band minimum. The Hall effect and electrical measurements show a variation in the carrier concentrations, mobility and resistivity of the films. In order to explore a better compromise in electrical and optical properties for transparent electrode applications, skin depths calculations are also done to find the optimized values of carrier concentration and mobility.

关键词： SnO_2 oxygen vacancies carrier concentration deposition rate electron beam evaporation