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Fe-doped ZnS film fabricated by electron beam evaporation and its application as saturable absorber for Er:ZBLAN fiber laser

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Chinese Physics B 2021年第7期30卷 289-293页

作者： Jiu-Lin Yang Guo-Ying Feng Du-Xin Qing Ya-Jie Wu Yun Luo Jian-Jun Wang Institute of Laser&Micro/Nano Engineering College of Electronics and Information EngineeringSichuan UniversityChengdu 610064China Research Center of Laser Fusion China Academy of Engineering PhysicsMianyang 621900China

High-quality Fe-doped Zn S films have been fabricated by electron beam *** the doping,the fabricated films still maintain the preferential crystalline orientation and phase purity of the host Zn *** to the observation of surface morphology,the root mean-square roughness of the samples increases slightly with the increase of doping *** of the prepared samples are in cubic zinc blende structure of Zn *** spectrum confirms a more obvious dip near 3μm with higher dopant concentration and it can be attributed to the typical^(5)E→^(5)T_(2)transition of Fe^(2+).Fe-doped Zn S film is also successfully used for Q-switched Er:ZBLAN fiber laser.

关键词： Fe-doped ZnS film electron beam evaporation Q-switching Er:ZBLAN

Photoluminescence properties of ZnSe_(1-x)Te_x thin films on GaAs/ITO substrates by electron beam evaporation technique

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Science China(Technological Sciences) 2011年第1期54卷 52-57页

作者： J.SUTHAGAR N.J.SUTHAN KISSINGER M.BALASUBRAMANIAM K.PERUMAL Department of Physics Karunya University School of Advanced Materials Engineering Chonbuk National University Department of Physics Kongunadu College of Arts & Science Department of Physics Sri Ramakrishna Mission Vidyalaya College of Arts & Science

Zinc chalcogenide which includes zinc selenide,zinc sulphide,zinc telluride and mixed crystals of these shows a great potential as an optoelectronic device material. Zinc selenotelluride is a suitable material for visible light emitting devices which are expected to cover the spectral range from yellow to blue. In our present study the composition controlled ZnSe1-xTex films with different Te content x = 0,0.2,0.4,0.6,0.8 and 1.0 were deposited by electron beam (EB) evaporation technique. GaAs films were deposited by vacuum evaporation route on indium tin oxide (ITO) substrates which were used as base for depositing the ZnSe1-xTex film. The band-gap energy change in the entire composition range was determined at room temperature by photoluminescence (PL) spectroscopy. The peak observed at about 2.56 eV shows the effect of solid solution formation between ZnSe and ZnTe which modifies the lattice and consequently the band edge emission characteristics. The heterostructures showed three peaks in the visible region of white light spectrum.

关键词： semiconducting II-VI materials ZnSeTe electron beam evaporation photoluminescence

Influences of annealing temperature on properties of Fe^2+:ZnSe thin films deposited by electron beam evaporation and their applications to Q-switched fiber laser

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Chinese Physics B 2020年第5期29卷 282-287页

作者： Du-Xin Qing Shu-Tong Wang Shou-Gui Ning Wei Zhang Xiao-Xu Chen Hong Zhang Guo-Ying Feng Shou-Huan Zhou Institute of Laser&Micro/Nano Engineering College of Electronics&Information EngineeringSichuan UniversityChengdu 610064China North China Research Institute of Electro-Optics Beijing 100015China

Fe^2+:ZnSe thin films are prepared on sapphire substrate at room temperature by electron beam evaporation and then annealed in vacuum(about 1×10^-4 Pa)at different *** influences of thermal annealing on the structural and optical properties of these films such as grain size and optical transmittance are *** x-ray diffraction patterns show that the Fe2+:ZnSe thin film is preferred to be oriented along the(111)plane at different annealing *** the film is annealed,the full-width-at-half-maximum(FWHM)of the x-ray diffraction peak profile(111)of the film decreases and its crystal quality is *** electron microscope images show that the films are more dense after being ***,the sample is used as a saturable absorber in ZBLAN fiber *** annealed Fe^2+:ZnSe thin films can be used to realize stable Q-switching modulation on ZBLAN fiber *** results demonstrate that the Fe2+:ZnSe thin film is a promising material for generating the high-power pulses of mid-infrared Q-switched fiber lasers.

关键词： electron beam evaporation thin film optical materials Q-switching

Controllable growth of wafer-scale PdS and PdS_(2) nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

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Journal of Semiconductors 2023年第12期44卷 64-71页

作者： Hui Gao Hongyi Zhou Yulong Hao Guoliang Zhou Huan Zhou Fenglin Gao Jinbiao Xiao Pinghua Tang Guolin Hao School of Physics and Optoelectronics and Hunan Institute of Advanced Sensing and Information Technology Xiangtan UniversityXiangtan 411105China College of Physics and Technology&Guangxi Key Laboratory of Nuclear Physics and Technology Guangxi Normal UniversityGuilin 541004China Department of electronic and Electrical Engineering University of SheffieldSheffield S102TNUK National Laboratory of Solid State Microstructures Nanjing UniversityNanjing 210093China

Palladium(Pd)-based sulfides have triggered extensive interest due to their unique properties and potential applications in the fields of electronics and ***,the synthesis of large-scale uniform PdS and PdS_(2)nanofilms(NFs)remains an enormous *** this work,2-inch wafer-scale PdS and PdS_(2) NFs with excellent stability can be controllably prepared via chemical vapor deposition combined with electron beam evaporation *** thickness of the pre-deposited Pd film and the sulfurization temperature are critical for the precise synthesis of PdS and PdS_(2) NFs.A corresponding growth mechanism has been proposed based on our experimental results and Gibbs free energy *** electrical transport properties of PdS and PdS_(2) NFs were explored by conductive atomic force *** findings have achieved the controllable growth of PdS and PdS_(2) NFs,which may provide a pathway to facilitate PdS and PdS_(2) based applications for next-generation high performance optoelectronic devices.

关键词： PdS PdS_(2) nanofilms controllable growth chemical vapor deposition electron beam evaporation

Characterization of Nd:Y3Al5O12 thin films prepared by electron beam evaporation deposition

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Characterization of Nd:Y3Al5O12 thin films prepared by elect...

electron beam deposition and characterization of thin film Ti-Ni for shape memory applications

2012 China Functional Materials Technology and Industry Forum

作者： Hao Ren Qun Zeng Xihui Liang School of Information and Optoelectronic Science and Engineering South China Normal University

Nd:YAG thin films have been prepared on Si(100) substrates by electron beam evaporation *** surface morphologies,crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction,scanning electron microscopy, photoluminescence spectroscopy,and *** crystallization of Nd:YAG thin films was improved after annealing at 1100℃for 1 hour in *** by a Ti:sapphire laser at 808 nm,photoluminescence spectra of Nd:YAG thin films were measured at room temperature,and the transition of F→I of Nd in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

关键词： Nd:YAG thin film electron beam evaporation Photoluminescence

来源： cnki会议评论

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Rare Metals 2006年第z2期25卷 237-242页

作者： NOH Hae-Yong JEE Kwang-Koo LEE Kyu-Hwan LEE Young-Kook Department of Metallurgical System Yonsei University Seoul 120-749 KoreaAdvanced Materials Research Center Division of Materials Korea Institute of Science and Technology Cheongryang Seoul 130-650 Korea Advanced Materials Research Center Division of Materials Korea Institute of Science and Technology Cheongryang Seoul 130-650 Korea Department of Metallurgical System Yonsei University Seoul 120-749 Korea

Thin film of Ti-Ni alloy has a potential to perform the microactuation functions required in the microelectromechanical system (MEMS). It is essential, however, to have good uniformity in both chemical composition and thickness to realize its full potential as an active component of MEMS devices. electron beam evaporation technique was employed in this study to fabricate the thin films of Ti-Ni alloy on different substrates. The targets used for the evaporation were first prepared by electron beam melting. The uniformity of composition and microstructure of the thin films were characterized by electron probe microanalysis (EPMA), Auger electron spectroscopy (AES), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The mechanical property of the thin films was evaluated by the nano-indentation test. The martensitic transformation temperature was measured by differential scanning calorimetry (DSC). It is confirmed that the chemical composition of deposited thin films is identical to that of the target materials. Furthermore, results from depth profiling of the chemical composition variation reveal that the electron beam evaporation process yields better compositional homogeneity than other conventional methods such as sputtering and thermal evaporation. Microstructural observation by TEM shows that nanometer size precipitates are preferentially distributed along the grain boundaries of a few micron size grains. The hardness and elastic modulus of thin films decreases with an increase in Ti contents.

关键词： electron beam evaporation TiNi SMA thin film martensitic transformation reverse martensitic transformation

Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

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Chinese Physics B 2015年第10期24卷 599-603页

作者：吴绍航张楠胡永生陈红蒋大鹏刘星元 State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanicsand PhysicsChinese Academy of Sciences University of Chinese Academy of Sciences Key Laboratory of Optical System Advanced Manufacturing Technology Chinese Academy of Sciences

Strontium-zinc-oxide（SrZnO） films forming the semiconductor layers of thin-film transistors（TFTs） are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide（ZnO） with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.

关键词： thin-film transistor ZnO electron beam evaporation

Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

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Journal of Semiconductors 2015年第12期36卷 38-41页

作者： Cholho Jang 叶志镇吕建国 State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Department of Materials Science Kim Il Sung University

Ga doped ZnO （GZO）/Cu grid double layer structures were prepared at room temperature （RT）. We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit （ФTC = 6.19 × 10^-3 Ω^-1） was obtained. In this case, the transmittance, resistivity and filling factor （FF） of the GZO/Cu grid double layer are 83.74%, 1.10 ×10^-4Ω.cm and 0.173, respectively.

关键词： transparent electrode electron beam evaporation Cu grid Ga doped ZnO

High quality non-rectifying contact of ITO with both Ni and n-type GaAs

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Journal of Semiconductors 2015年第5期36卷 14-18页

作者：王青松 Masao Ikeda 谭明代盼吴渊渊陆书龙杨辉 Key Laboratory Nano-Devices and Application Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences Nano Science and Technology Institute University of Science and Technology of China University of Chinese Academy of Sciences

We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model （c-TLM） method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81×10^-6 Ω.cm^2, while that oflTO/n-GaAs is 7×10^-5Ω.cm^2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.

关键词： ITO electron beam evaporation ITO/n-GaAs specific contact resistance