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检索条件"主题词=electrical characterization"
9 条 记 录,以下是1-10 订阅
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electrical characterization of an individual nanowire using flexible nanoprobes fabricated by atomic force microscopy-based manipulation
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Nanotechnology and Precision Engineering 2023年 第4期6卷 55-65页
作者: Yilin Wang Enxiu Wu Jirui Liu Mengke Jia Rui Zhang Sen Wu State Key Laboratory of Precision Measuring Technology and Instruments Tianjin UniversityTianjin 300072China
Nanowires have emerged as promising one-dimensional materials with which to construct various nanocircuits and ***,measuring the electrical properties of individual nanowires directly remains challenging because of th... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
A comparison of power measurement techniques and electrical characterization of an atmospheric pressure plasma jet
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Plasma Science and Technology 2022年 第10期24卷 74-85页
作者: Olivera JOVANOVIĆ Nevena PUAČ NikolaŠKORO Institute of Physics University of BelgradePregrevica 118Belgrade 11080Serbia
In the last two decades a growing interest has been shown in the investigation of atmospheric pressure plasma jets(APPJs)that operate in contact with liquid *** order to form a complete picture about such experimental... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Synthesis and electrical characterization of tungsten oxide nanowires
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Chinese Physics B 2009年 第7期18卷 3024-3030页
作者: 黄睿 朱静 于荣 Beijing National Center for Electron Microscopy The State Key Laboratory of New Ceramics and Fine ProcessingLaboratory of Advanced MaterialsDepartment of Materials Science and EngineeringTsinghua University
Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) *** powders are used to control o... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Pick-up strategies for and electrical characterization of ZnO nanowires with a SEM-based nanomanipulator
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Nanotechnology and Precision Engineering 2023年 第1期6卷 26-31页
作者: Mei Liu Lingdi Kong Weilin Su Aristide Djoulde Kai Cheng Jinbo Chen Jinjun Rao Zhiming Wang Shanghai Key Laboratory of Intelligent Manufacturing and Robotics School of Mechatronic Engineering and AutomationShanghai UniversityShanghai 200444China Guangdong Key Laboratory of Fuel Cell Technology School of Chemistry and Chemical EngineeringSouth China University of TechnologyGuangzhou 510640China
Because of their unique mechanical and electrical properties,zinc oxide(ZnO)nanowires are used widely in microscopic and nanoscopic devices and structures,but characterizing them remains *** this paper,two pick-up str... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Novel electrical characterization for advanced CMOS gate dielectrics
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Science in China(Series F) 2008年 第6期51卷 774-779页
作者: T. P. MA Department of electrical Engineering Yale University
This paper reviews the following electrical characterization techniques for measuring the microscopic bonding structures, impurities, and electrically active defects in advanced CMOS gate stacks: 1) inelastic electr... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope
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Nano Research 2018年 第11期11卷 5924-5934页
作者: Andreas Nagelein Matthias Steidl Stefan Korte Bert Voigtlande Wemer Prost Peter Kleinschmidt Thomas Hannappel Technische Universitat Ilmenau Institut for Physik 98693 llmenau Germany Peter Grunberg Institut (PGI-3 ) Forschungszentrum.julich 52425 Julich Germany JARA-Fundamentals of Future Information Technology Forschungszentrum Julich 52425 Julich Germany University of Duisburg-Essen Solid State Electronics Department 47057 Duisburg Germany
Profiling of the electrical properties of nanowires (NWs) and NW heterocontacts with high spatial resolution is a challenge for any application and advanced NW device development. For appropriate NW analysis, we have ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices
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Chinese Physics Letters 2006年 第4期23卷 960-963页
作者: 戴振宏 倪军 Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience Tsinghua University Beijing 100084 Department of Physics Yantai University Yantai 264005
We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Antimony fluoride(SbF_(3)):A potent hole suppressor for tin(II)-halide perovskite devices
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InfoMat 2023年 第1期5卷 106-113页
作者: Ao Liu Huihui Zhu Soonhyo Kim Youjin Reo Yong-Sung Kim Sai Bai Yong-Young Noh Department of Chemical Engineering Pohang University of Science and TechnologyPohangRepublic of Korea Korea Research Institute of Standards and Science DaejeonRepublic of Korea Department of Nano Science University of Science and TechnologyDaejeonRepublic of Korea Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengduPeople's Republic of China
Tin(Sn^(2+))-based halide perovskites have been developed as the most prom-ising alternatives to their toxic Pb-based counterparts in optoelectronic ***,the facile tin vacancy formation and easy oxidization characteri... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
characterization of Photovoltaic Modules under Arid Environments
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Journal of Energy and Power Engineering 2018年 第1期12卷 44-56页
作者: Abubaker Younis Esam Elsarrag Yousef Alhorr Mahmoud Onsa Gulf Organization for Research and Development Qatar Science and Technology Park Tech 1 Level 2 203 Qatar Department of Mechanical Engineering Faculty of Engineering University of Khartoum Khartoum Sudan
Performance characteristics data of solar photovoltaic (PV) cell/module are conventionally obtained under standard testing conditions. In the present work, the performance of PV modules under extreme temperatures an... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论