Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

作     者：戴振宏 倪军 

作者机构：Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience Tsinghua University Beijing 100084 Department of Physics Yantai University Yantai 264005 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2006年第23卷第4期

页      面：960-963页

核心收录：

学科分类：07[理学] 070201[理学-理论物理] 0702[理学-物理学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No 10404022  and the National Basic Research Programme of China under Grant No G2000067107 

主　　题：QUANTUM-WELL INTRINSIC BISTABILITY ELECTRICAL CHARACTERIZATION TRANSPORT DYNAMICS STATES RANGE 

摘      要：We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.