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On the voltage behavior of quantum dot light-emitting diode

Nano Research 2023年第4期16卷 5511-5516页

作者： Xiangwei Qu Jingrui Ma Pai Liu Kai Wang Xiao Wei Sun Institute of Nanoscience and Applications Southern University of Science and TechnologyShenzhen 518055China Key Laboratory of Energy Conversion and Storage Technologies(Southern University of Science and Technology) Ministry of EducationGuangdong University Key Laboratory for Advanced Quantum Dot Displays and LightingGuangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and DevicesShenzhen Key Laboratory for Advanced Quantum Dot Displays and Lightingand Department of Electrical and Electronic EngineeringSouthern University of Science and TechnologyShenzhen 518055China

The origin of the efficiency drop of quantum dot light-emitting diode(QLED)under consecutive voltage sweeps is still a *** this work,we report the voltage sweep behavior of *** observed the efficiency drop of red QLED with ZnMgO electron transport layer(ETL)under consecutive voltage *** contrast,the efficiency increases for ZnO ETL *** analyzing the electrical characteristics of both devices and surface traps of ZnMgO and ZnO nanoparticles,we found the efficiency drop of ZnMgO device is related to the hole leakage mediated by trap state on ZnMgO *** ZnO device,the efficiency raise is due to suppressed electron *** hole leakage also causes rapid lifetime degradation of ZnMgO ***,the efficiency and lifetime degradation of ZnMgO device can be eliminated with shelf *** work reveals the distinct voltage sweep behavior of QLED based on different ETLs and may help to understand the lifetime degradation mechanism in QLED.

关键词： quantum dot light-emitting diode voltage sweep behavior efficiency drop hole leakage current

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Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

引用

Journal of Semiconductors 2011年第6期32卷 47-50页

作者：郭恩卿刘志强汪炼成伊晓燕王国宏 Research and Development Center for Semiconductor Lighting Institute of SemiconductorsChinese Academy of Sciences

A GaN vertical light emitting diode（LED）with a current block layer（CBL）was *** LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL were *** and electrical tests were carried *** results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6%and 60.7%higher than that of vertical LEDs without a CBL at 350 mA,*** efficiencies of vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%,78%and 85.5%of their maximum efficiency at 350 mA,respectively. Moreover,vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.

关键词： current block layer efficiency drop vertical LED non-ohmic contact

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