Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

作     者：郭恩卿 刘志强 汪炼成 伊晓燕 王国宏 

作者机构：Research and Development Center for Semiconductor LightingInstitute of SemiconductorsChinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第6期

页      面：47-50页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：Project supported by the National High Technology Research and Development Program of China(No2008AA03A197) the Knowledge Innovation Program of ISCAS(No08S4060000) 

主　　题：current block layer efficiency drop vertical LED non-ohmic contact 

摘      要：A GaN vertical light emitting diode（LED）with a current block layer（CBL）was *** LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL were *** and electrical tests were carried *** results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6%and 60.7%higher than that of vertical LEDs without a CBL at 350 mA,*** efficiencies of vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%,78%and 85.5%of their maximum efficiency at 350 mA,respectively. Moreover,vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.