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Effect of dose rate on the characteristics of dislocation loops in palladium:In-situ TEM analysis during 30 keV H_(2)^(+)irradiation

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Journal of Materials Science & Technology 2023年第19期150卷 86-95页

作者： Dewang Cui Ziqi Cao Yifan Ding Yipeng Li Guang Ran College of Energy Xiamen UniversityXiamen 361102China Fujian Research Center for Nuclear Engineering Xiamen 361102China

Ion irradiation is usually used to simulate neutron irradiation to accelerate the evaluation of the irradia-tion behavior of reactor ***,the validity of using a high damage rate of ion irradiation to simulate a low damage rate of neutron irradiation has always been a controversial ***,the effect of two dose rates(2.94×10^(-6) and 7.35×10^(-5) dpa s^(-1))on the characteristics and evolution of dislo-cation loops in palladium was studied in situ during 30 keV H2+irradiation using transmission electron *** dose rate obviously affected the nucleation rate and growth rate of dislocation loops,the types(Frank loops or perfect loops)of dislocation loops,and the irradiation hardening and total damage obtained from the product of average loop size and loop *** the same irradiation dose,a high dose rate would lead to high loop density,small average loop size,low loop growth rate,and low irra-diation hardening and damage induced by loops in pure ***,it was found for the first time that a high dose rate was beneficial to the generation of perfect dislocation *** effect of dose rate was attributed to the different dynamic equilibrium results between the effective generation rate of point defects and their absorption rate by existing *** present results show that the effect of dose rate should be considered when using ion irradiation to simulate neutron irradiation to evaluate the irradiation damage to materials.

关键词： Palladium Hydrogen irradiation In-situ TEM observation Dislocation loop dose rate

Study on the dose rate upset effect of partially depleted silicon-on-insulator static random access memory

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Chinese Physics B 2008年第12期17卷 4599-4605页

作者：赵发展刘梦新郭天雷刘刚海潮和韩郑生杨善潮李瑞宾林东生陈伟 Institute of Microelectronics of Chinese Academy of Sciences Northwest Institute of Nuclear Technology

This paper implements the study on the dose rate Upset effect of PDSOI SRAM （Partially Depleted Silicon- On-Insulator Static Random Access Memory） with the Qiangguang-I accelerator in Northwest Institute of Nuclear Technology. The SRAM （Static Random Access Memory） chips are developed by the Institute of Microelectronics of Chinese Academy of Sciences. It uses the full address test mode to determine the upset mechanisms. A specified address test is taken in the same time. The test results indicate that the upset threshold of the PDSOI SRAM is about l×10s Gy（Si）/s. However, there are a few bits upset when the dose rate reaches up to 1.58 x 109 Gy（Si）/s. The SRAM circuit can still work after the high level 3~ ray pulse. Finally, the upset mechanism is determined to be the rail span collapse by comparing the critical charge with the collected charge after γ ray pulse. The physical locations of upset cells are plotted in the layout of the SRAM to investigate the layout defect. Then, some layout optimizations are made to improve the dose rate hardened performance of the PDSOI SRAM.

关键词： dose rate PDSOI SRAMs upset

Analytical and statistical calculation of gamma dose rate for the accident of losing the shield for Tehran Research Reactor

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Chinese Physics C 2008年第11期32卷 877-881页

作者： Farshid Tabbakh Azim Ahmadinyar School of Nuclear Science Institute of Nuclear Reactors and Accelerators Atomic Energy Organization of Iran North Kargar Av. Tehran Iran

In this paper we study the analytical and statistical results of estimating the gamma dose rate at pool access floor in TRR when the core shield accidentally decreases to some non-permitted levels. Due to the risk of experimental techniques, we use the analytical and statistical methods. In normal conditions （no risk）, the discrepancies between experiment and two methods are justified and it is found that for such problems we have to normalize these methods to experimental results as follows： the analytical method by factor 0.13 and MCNP by 1.7.

关键词： TRR gamma-ray dose rate MCNP4C

Research on radiation dose rate distribution in the backscattering neutron hall of CSNS

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Radiation Detection Technology and Methods 2020年第1期4卷 116-129页

作者： Qingbiao Wu Sixuan Zhuang Qiongyao Liu Hantao Jing Rong Ye Lun Li Yufei Wang Qingbin Wang China Spallation Neutron Source(CSNS) Institute of High Energy Physics(IHEP)Chinese Academy of Sciences(CAS)Room A2-431No.1Zhongzhiyuan RoadDalangDongguan 523803China Dongguan Institute of Neutron Science(DINS) Dongguan 523808China

Purpose To evaluate the prompt and induced dose rate in backscattering neutron hall for radiation protection and safety *** The dose rates were calculated by Monte Carlo code FLUKA,with the"multi-step"simulation method based on traditional"two-step simulation"*** Operation time of staff workers does not need to be *** with the increase in beam power and irra-diation time,serious consideration might need to be taken as the dose rate of samples may be higher than the limit value.

关键词： CSNS Radiation dose rate Backscattering neutron Monte Carlo

Secondary and activated X(γ)radiation of SPHIC particle therapy facility

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Nuclear Science and Techniques 2021年第4期32卷 84-91页

作者： Wei-Ming Sun Ning Du Wen-Dong Tian Lan Wang Department of Medical Management Shanghai Proton and Heavy Ion CenterShanghai Engineering Research Center of Proton and Heavy Ion Radiation TherapyShanghai 201315China Siemens Healthineers Ltd. Shanghai 201321China

We report the secondary X(γ)radiation from the accelerator in a normal operating state and activated X(γ)radiation from the accelerator devices when the accelerator stops operating in the cancer treatment facility of the Shanghai Proton and Heavy Ion Center(SPHIC).These radiation measurements show us the structural radiation distribution along the beam lines and devices inside the accelerator room when the beam is on and off and can support the radiation protection design of the accelerator facility used for cancer treatment and help evaluate the accumulated radiation dose in the case of an emergency,such as a personal safety system failure or a radiation *** radiation dose rate measured in this facility shows that the facility is safe from the radiation protection *** shooting the quality assurance(QA)beam,the radiation dose rate in the treatment room was also measured to investigate the radiation dose space distribution and decay time *** addition,the time period before safely entering the treatment room after determining the shooting of the QA beam is recommended to be approximately 5 min.

关键词： Secondary radiation Activated radiation Nuclear safety and radiation protection dose rate Accelerator

Radiation dose distribution of liquid fueled thorium molten salt reactor

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Nuclear Science and Techniques 2021年第2期32卷 112-122页

作者： Chang-Yuan Li Xiao-Bin Xia Jun Cai Zhi-Hong Zhang Guo-Qing Zhang Jian-Hua Wang Zhi-Cheng Qian University of Chinese Academy of Sciences Beijing 100049China Shanghai Institute of Applied Physics Chinese Academy of SciencesShanghai 201800China Siemens Shanghai Medical Equipment Ltd. Shanghai 201318China

A liquid fueled thorium molten salt reactor(TMSR-LF),one of the Generation IV reactors,was designed by the Shanghai Institute of Applied Physics,Chinese Academy of *** study uses the‘rt code to calculate the neutron and gamma dose rate distributions around the *** types of tallies and variance reduction techniques were employed to reduce calculation time and obtain convergent calculation *** on the calculation and analysis results,the TMSR-LF1 radiation shield with a 60-cm serpentine concrete layer and a 120-cm ordinary concrete layer is able to meet radiation *** gamma dose rate outside the reactor biological shield was 16.1 mSv h-1;this is higher than the neutron dose rate of 3.71×10^(–2)mSv h^(-1).The maximum thermal neutron flux density outside the reactor biological shield was 1.899103 cm^(-2)s^(-1),which was below the 19105 cm^(-2)s^(-1)limit.

关键词： Liquid fueled Molten salt reactor Neutron and gamma dose rate

Helium bubble formation and evolution in NiMo-Y_(2)O_(3)alloy under He ion irradiation

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Chinese Physics B 2022年第4期31卷 500-505页

作者： Awen Liu Hefei Huang Jizhao Liu Zhenbo Zhu Yan Li School of Physical Science and Technology Shanghai Tech UniversityShanghai 201210China Shanghai Institute of Applied Physics Chinese Academy of SciencesShanghai 201800China School of Nuclear Science and Technology University of Chinese Academy of SciencesBeijing 100049China

We report helium ion irradiation experiments for a new type of dispersion-strengthened NiMo-Y_(2)O_(3)alloy with three different irradiation doses and varying irradiation dose rates at 750℃to evaluate its helium-induced damage *** electron microscopy was used to reveal the evolution of helium bubbles after *** experimental results show that with increasing ion dose,the number density of helium bubbles increases ***,the mean size of helium bubbles first increases and then decreases,mainly due to the varied ion dose *** volume fractions of helium bubbles in the three investigated samples after irradiation are 0.15%,0.32%,and 0.27%,which are lower than that of the Hastelloy N alloy(0.58%)after similar irradiation *** indicates that the NiMo-Y_(2)O_(3)alloy exhibits better helium-induced-swelling resistance than the Hastelloy N alloy,highlighting its potential applicability to MSRs,from the perspective of irradiation performance.

关键词： NiMo-Y_(2)O_(3)alloy dose rate helium bubble evolution volume fraction

Annealing behavior of radiation damage in JFET-input operational amplifiers

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Journal of Semiconductors 2009年第5期30卷 60-64页

作者：郑玉展陆妩任迪远王义元郭旗余学锋 Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences Graduate University of Chinese Academy of Sciences

The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers （op-amps） were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.

关键词： JFET-input operational amplifiers dose rate radiation damage annealing behavior

Study of latch-up immunization in bulk CMOS integrated circuits exposed to transient ionizing radiation

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Science China(Technological Sciences) 2012年第11期55卷 3242-3247页

作者： LI RuiBin CHEN Wei LIN DongSheng YANG ShanChao BAI XiaoYan WANG GuiZhen LIU Yan QI Chao MA Qiang Northwest Institute of Nuclear Technology Xi'an 710024China

This paper presents experimental results of transient gamma irradiation effects on two kinds of *** is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor(CMOS) device IDT6116,the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS *** results show that the L7805CV's output interruption after transient irradiation can prevent latch-up from occurring on the second stage *** demanded minimum interruption duration to avoid latch-up varies with dose rate,and this is confirmed by the experimental results.

关键词： transient radiation' latch up dose rate bulk CMOS device