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Epitaxial Growth of High Quality Diamond Film on the Cubic Boron Nitride Surface by Chemical Vapor deposition

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Chinese Physics Letters 1996年第10期13卷 779-781页

作者： GAO Chun-xiao ZHANG Tie-chen ZOU Guang-tian JIN Zeng-sun YANG Jie National Laboratory of Superhard Materials Jilin UniversityChangchun 130023 Laboratory of Changchun Flying School Changchun 130012

High quality diamond epitaxial film has been obtained on high pressure synthesized cubic boron nitride crystal surface by dc glow discharge chemical vapor deposition. The growth characteristics of the epitaxial film have been investigated by scanning electron microscope. The quality of the film has been confirmed by Raman spectroscope to be close to that of natural diamond.

关键词： deposition. film boron

Measurements of Film Thickness and Growth Temperature of YBa_(2)Cu_(3)O_(7-δ) Films by Pyrometric Absorption Method

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Chinese Physics Letters 1997年第5期14卷 367-370页

作者： XIONG Xu-ming ZHOU Yue-liang WANG Hui-sheng CUI Da-fu LU Hui-bin CHEN Zheng-hao YANG Guo-zhen Optical Physics Laboratory Institute of PhysicsChinese Academy of SciencesBeijing 100080

A pyrometric absorption method suitable for strongly absorbing films has been developed to monitor the YBa_(2)Cu_(3)O_(7-δ)film *** method makes use of the temperature difference between the heater and the *** deducing the absorption formula of radiation light and fitting it to the radiation intensity data measured,it is possible to monitor the film thickness and the film surface temperature during *** results show that this is a simple and practicable method.

关键词： deposition. film absorption

Electron Field Emission from Different sp3 Content Diamond-Like Carbon Films

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Chinese Physics Letters 1999年第2期16卷 152-154页

作者： MAO Dong-sheng ZHAO Jun LI Wei WANG Xi LIU Xiang-huai ZHU Yu-kun ZHOU Jiang-yun FAN Zhong LI Qiong XU Jing-fang Ion Beam Laboratory Shanghai Institute of MetallurgyChinese Academy of SciencesShanghai 200050 Department of Electronics Science and Technology East China Normal UniversityShanghai 200062

Different sp^(3) content diamond-like carbon films are deposited on to highly n-doped Si(111)substrates by a new plasma deposition.technique-filtered arc *** electron field emission properties are studied by using a simple diode *** is showed that the turn-on field is decreased and field emission current density is increased with the increasing sp3 content(75-80%,80-83%,and 88-90%)of the *** emission current of 0.1μA from the three samples was detected under the electric field of 10.1,5.6,and 2.9 V/μm and emission current density of 4.4,15.2,and 43.2μA/cm^(2),respectively,under 14.3 V/μ***-Nordheim(F-N)plots of the three samples nearly show of lineaity indicating that electron field emission obeys F-N theory.

关键词： structure. deposition. theory.

Graphene Domains Synthesized on Electroplated Copper by Chemical Vapor deposition

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Chinese Physics Letters 2013年第2期30卷 225-227页

作者： WANG Wen-Rong LIANG Chen LI Tie YANG Heng LU Na WANG Yue-Lin State Key Laboratories of Transducer Technology Science and Technology on Microsystem LaboratoryShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050 University of Chinese Academy of Sciences Beijing 100049

Electroplated Cu,which can be compatible with integrated circuit technology and large-scale silicon wafers,is explored as a substrate to synthesize graphene domains by ambient-pressure chemical vapor *** single crystal domains of graphene are synthesized on electroplated Cu under dilute methane gas *** electron microscopy images of graphene domains grown on electroplated Cu indicate that the domain size is time-dependent,and the domains can cross Cu grain boundaries and are distributed more uniformly on electroplated Cu surface than those grown on Cu foil.

关键词： deposition. ambient dilute

Carrier Density and Electric Field Dependent Nonlinear Transport of Chemical Vapor deposition.Graphene

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Chinese Physics Letters 2013年第3期30卷 127-130页

作者： KHALIL Hafiz M.W. KELEKCI Ozgur NOH Hwayong Department of Physics and Graphene Research Institute Sejong UniversitySeoul 143-747Korea

We report on the measurements of nonlinear current-voltage characteristics of graphene fabricated by chemical vapor *** current-voltage characteristic is described by a power law with a superlinear dependence of the current on the voltage,and the nonlinearity depends on the carrier density and the excitation *** nonlinearity is strongest at the Dirac point and becomes weaker as the carrier density *** the Dirac point,we also observe a crossover to a much stronger nonlinear transport when the electric field increases above 104 V/m.

关键词： deposition. nonlinearity nonlinear

Strain Distributions in Non-Polar a-Plane In_(x)Ga_(1−x)N Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction

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Chinese Physics Letters 2013年第9期30卷 169-172页

作者： ZHAO Gui-Juan YANG Shao-Yan LIU Gui-Peng LIU Chang-Bo SANG Ling GU Cheng-Yan LIU Xiang-Lin WEI Hong-Yuan ZHU Qin-Sheng WANG Zhan-Guo Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesP.O.Box 912Beijing 100083 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of SemiconductorsChinese Academy of SciencesP.O.Box 912Beijing 100083

By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In_(x)𝑦Ga_(1−x)𝑦N thin films grown on r-sapphire substrates by metalorganic chemical vapour *** results of the inplane grazing incidence diffraction technique are analyzed and compared with a complementary out-of-plane high resolution x-ray diffraction *** the indium composition is low,the a-plane In_(x)𝑦Ga_(1−x)𝑦N layer is tensile strain in the growth direction(𝑏a-axis)and compressive strain in the two in-plane directions(𝑛a-axis and𝑑a-axis).The strain status becomes contrary when the indium composition is *** stress in the𝑛a-axis direction𝜏σyy is larger than that in the a-axis directionσ***,strain in the two in-plane directions decrease and the crystal quality becomes better with the growing of the In_(x)Ga_(1−z)N film.

关键词： technique deposition. plane

Pits on the Surfaces of Epitaxial c-Axis YBa2Cu3O7-δ Thin Films Grown on Vicinal SrTiO3 Substrates

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Chinese Physics Letters 2001年第1期18卷 91-93页

作者： HU Wen-Fei LI Lin ZHAO Xin-Jie LIU Wei CHEN Ying-Fei WANG Tian-Sheng QIU Xiang-Gang Institute of Physics&Center for Condensed Matter Physics Chinese Academy of SciencesBeijing100080 Department of Material Science Yanshan UniversityQinhuangdao 066004 CREST Japan Science and Technology Cooperation3-4-1 OkuboShinjukuTokyo 169Japan

The reoccurrence of pits has been found on the surfaces of c-axis YBa2CusO7-δ(YBCO)films grown epitaxially on 10℃vicinal SrTiOs substrates by pulsed laser *** are always associated with films with a stepterrace structure,while polycrystalline films have no *** formation is attributed to the large interfacial stress induced by vicinal substrate and oxygen deficiency of the YBCO film during the tetragonal-to-orthorhombic(TO)phase transition,which cannot be released by forming twins,and leads to rupturing of the film *** reducing the oxidation partial pressure for the T-O phase transition to 80 Pa,no pits were formed,and the YBCO film is superconducting at 60K.

关键词： deposition. surface. film

Porous Structures and Short-Wavelength Photoluminescence of C^(+)-Implanted SiO_(2) Films

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Chinese Physics Letters 1999年第5期16卷 361-363页

作者： ZHAO Jun MAO Dong-sheng DING Xing-zhao LIN Zi-xin JIANG Bing-yao YU Yue-hui YANG Gen-qing LIU Xiang-huai S.Jin H.Bender Ion Beam Laboratory Shanghai Institute of MetallurgyChinese Academy of SciencesShanghai 200050 State Key Laboratory of Transducer Technology Shanghai Institute of MetallurgyChinese Academy of SciencesShanghai 200050 IMEC KapeldreefB-3001LeuvenBelgium

C ions of three different energies were sequentially implanted into SiO_(2) films grown by plasma enhanced chemical vapor *** of the samples were studied with transmission electron microscopy(TEM)and secondary ion mass spectroscopy As revealed by cross-sectional TEM,porous structures had been created in the implanted region during ion *** photoluminescence(PL)was detected from the as-implanted ***,intense short-wavelength PL peaking at 360-370nm and ~450nm was observed from the annealed *** blue light from samples excited by an Xe lamp can be observed by naked eyes at room *** light emission mechanisms are briefly discussed.

关键词： temperature. deposition. sectional

Preparation of AlN Films by Ion-Beam-Enhanced deposition

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Chinese Physics Letters 2001年第9期18卷 1282-1284页

作者： MEN Chuan-Ling XU Zheng ZHENG Zhi-Hong DUO Xin-Zhong ZHANG Miao LIN Cheng-Lu Institute of Microelectronic Materials School ofMaterial Science and EngineeringTongji UniversityShanghai 200092 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of MetallurgyChinese Academy of SciencesShangh 200050

Aluminium nitride (AIN) films have been synthesized on Si(l00) substrates by ion-beam-enhanced deposition. The spreading resistance profile results suggest that the spreading resistance decreases with increasing rates of Al evaporation. If the evaporation rate of Al is higher than 2.5 A/s, the quality of the AIN film will greatly deteriorate. The spreading resistance of the best quality film deposited at 0.5 A/s rate of Al was larger than 108Ω. X-ray photoelectron spectroscopy measurements indicate the formation of AIN films at 0.5 and 1.0 A/s evaporation rates of Al. With the increasing evaporation rate of Al, the ratio of N to Al is decreased. When deposited at 0.5 and 1.0A/s evaporation rates of Al, the ratios of N to Al were 0.402:1 and 0.250:1, respectively. Atomic force microscopy observation also shows that the surfa:e of the AIN film formed at the 0.5 A/s rate is smoother and more uniform than that formed at 1.0 A/s.

关键词： deposition. film resistance