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Excitation of defect modes from the extended photonic band-gap structures of 1D photonic lattices

Chinese Physics B 2010年第1期19卷 284-288页

作者：周可雅郭忠义 Muhammad Ashfaq Ahmad 刘树田 Department of Physics Harbin Institute of Technology COMSATS Institute of Information Technology Department of Physics

This paper stuides numerically the model equation in a one dimensional defective photonic lattice by modifying the potential function to a periodic function. It is found that defect modes （DMs） can be regarded as Bloch modes which are excited from the extended photonie band-gap structure at Bloch wave-numbers with kx = 0. The DMs for both positive and negative defects are considered in this method.

关键词： optical-induced photonic lattices photonic band-gaps defect modes

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Sharp photonic Crystal defect modes and Their Response to Ultrashort Optical Pulses

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光学学报 2003年第S1期23卷 367-368页

作者： Kyozo Kanamoto Sheng Lan Naoki Ikeda Yoshimasa Sugimoto Kiyoshi Asakawa Hiroshi Ishikawa The Femtsecond Technology Research Association 5-5 Tokodai Tsukuba 300-2635 Japan

Single photonic crystal defects based on an air-bridge structure were fabricated. We obtained sharp defect modes with quality factors higher than 600 and observed their response to ultrashort optical pulses by utilizi... 详细信息

关键词： Ultrashort Optical Pulses defect modes ultrashort optical pulses crystal defects defect modes

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Temperature-Dependent Raman Scattering of Phonon modes and defect modes in GaN and p-Type GaN Films

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Journal of Semiconductors 2005年第4期26卷 635-640页

作者：王瑞敏陈光德 Lin J Y Jang H X 西安交通大学理学院西安710049 Department of Physics Kansas State University

Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78 and 573K.A peak at 247cm -1 is observed in both Raman spectra of GaN and Mg-doped *** is suggested that the defect-induced scattering is origin of the *** electronic Raman scattering mechanism and Mg-related local vibrational mode are ***,the differences of E_2 and A_1(LO) modes in two samples are also *** stress relaxation is observed in Mg-doped GaN.

关键词： GaN p-type GaN ,Raman scattering defect modes

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High-Efficiency Bistable Switching Based on One-Dimensional Photonic Crystals with Single-Negative Materials

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Chinese Physics Letters 2008年第8期25卷 2900-2903页

作者：杜桂强江海涛李宏强张冶文陈鸿 Pohl Institute of Solid State Physics Tongji University Shanghai 200092

We study theoretically the nonlinear responses of one-dimensional photonic crystals （PCs） composed of alternating two kinds of single-negative （permittivity-negative and permeability-negative） materials embedded with a Kerrtype nonlinear defect layer. In conventional PCs, it is difficult to realize a bistable switching with both low threshold and quick response time. However, in PCs with single-negative materials, by changing the ratio of the thicknesses of the two types of layers, with the decreasing size of the structure, the switching response time is shortened and the threshold intensity decreases simultaneously.

关键词： BAND-GAP STRUCTURES defect modes TRANSMISSION BISTABILITY INDEX MEDIA LAYER

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Design of Two-Dimensional Photonic Crystal Edge Emitting Laser for Photonic Integrated Circuits

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Chinese Physics Letters 2006年第10期23卷 2759-2762页

作者：马小涛郑婉华任刚陈良惠 Nano-Optoelectronics Laboratory Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benefits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2（λ/nslab）^3 for oscillation mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300.

关键词： HIGH-QUALITY-FACTOR WAVE-GUIDE LASER defect modes SLAB LATTICE VOLUME

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