Temperature-Dependent Raman Scattering of Phonon Modes and Defect Modes in GaN and p-Type GaN Films

作     者：王瑞敏 陈光德 Lin J Y Jang H X WANG Ruimin;Chen Guangde;LIN J Y;Jang H X

作者机构：西安交通大学理学院西安710049 Department of PhysicsKansas State University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2005年第26卷第4期

页      面：635-640页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：国家自然科学基金资助项目(批准号:10474078)~~ 

主　　题：GaN p-type GaN ,Raman scattering defect modes 

摘      要：Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78 and 573K.A peak at 247cm -1 is observed in both Raman spectra of GaN and Mg-doped *** is suggested that the defect-induced scattering is origin of the *** electronic Raman scattering mechanism and Mg-related local vibrational mode are ***,the differences of E_2 and A_1(LO) modes in two samples are also *** stress relaxation is observed in Mg-doped GaN.