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Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors
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Chinese Physics B 2018年 第9期27卷 545-549页
作者: Xiao-Song Zhao Wei-Hua Han Yang-Yan Guo Ya-Mei Dou Fu-Hua Yangl, Engineenng Research Center for Semiconductor Integrated Technology Beijing Engineering Center of Semiconductor Micro-Nano Integrated TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing 100083China 3 State Key Laboratory for Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China
We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from 6 K to 250 K. Several current steps are observed at the i... 详细信息
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