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Fabrication of 3D structure by combining AFM and chemical etching on crystalline silicon surface

Journal of Harbin Institute of Technology(New Series) 2006年第6期13卷 667-670页

作者：袁福龙郭永峰梁迎春李丽朱宇君王岩 Precision Engineering Research Institute Harbin Institute of Technology School of Chemistry and Material Science Heilongjiang University

AFM is used for forming silicon dioxide as a layer (mask) on the silicon wafer surface (100) during the cutting process in ambient atmosphere. The silicon dioxide is made through reaction of silicon and oxygen in the atmosphere. As a result of the anisotropic behavior of single crystalline silicon, the etching rates in alkaline solution depend greatly on the various crystal orientations. The anisotropic etching behaviors in KOH solution and reasons of crystalline silicon are described. Effect of etching conditions such as etching temperature and KOH concentration of the alkaline solution on height of the micro-protuberances has been described.

关键词： atomic fore microscope (AFM) micro machining alkaline solution crystalline silicon anisotropy etching

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History of the Amorphous silicon on crystalline silicon Heterojunction Solar Cell

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Journal of Energy and Power Engineering 2011年第3期5卷 222-226页

作者： H.C. Neitzert W.R. Fahrner Department of Electrical Engineering （DIIIE） Salerno University 84084 Fisciano （SA） Italy School of Photovoltaics University of Nanchang China

Some commercially available solar panels with very high efficiencies for terrestrial photovoltaic applications are based on the amorphous silicon on crystalline silicon material system. This type ofheterostructure has more than 40 years＇ old history. The early development of the technology and the results, obtained in the last years with this type of solar cell are reviewed. In particular it is demonstrated why the physical understanding of the interface properties and band-structure was important for the development of high efficiency solar cells.

关键词： History solar cell amorphous silicon crystalline silicon heterojunction.

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Development of metal-recycling technology in waste crystalline-silicon solar cells

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Clean Energy 2023年第3期7卷 532-546页

作者： Dehai Lin Zilin Liu Xiaoduan Li Zixiong Cao Rihua Xiong National Institute of Clean and Low Carbon Energy 102211BeijingChina College of Chemical Engineering Zhengzhou University450001HenanChina

Solar energy is currently one of the most promising clean energy sources and the use of solar energy has led to a rapid increase in the number of solar *** one of the fastest-growing electronic wastes,the resource treatment of solar cells at the end of their life should not be *** review discusses the trend for the market development of crystalline-silicon solar cells and analyzes their physical structure and *** also discusses the current domestic and international recycling technologies for crystalline-silicon solar cells,including manual dismantling,inorganic acid dissolution,the combination of heat-treatment and chemical methods,and organic solvent *** shortcomings of the above treatment methods are discussed and some views on the recycling of waste crystalline-silicon solar cells are *** suggestions for the green and sustainable development of crystalline-silicon solar cells are put forward by comparing different treatment-recycling processes.

关键词： waste solar cells crystalline silicon metal recycling dismantling

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Electrical characterization and measurements of SiN thin films on crystalline silicon substrates by PECVD after RTP

Electrical characterization and measurements of SiN thin fil...

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第二届晶体硅太阳电池及材料科学与技术国际研讨会

作者： Bingyan Ren1,Bei Guo1’ 2,Yan Zhang1’ 2,Bing Zhangl’ 2, Hongyuan Li1,Xudong Li 2 School of Material Science and Engineering,Hebei University of Technology,300130, I~an Jin,China Beijing Solar Energy Research Institute,3# HuaYuan Road,HaiDian District Beiiing 100083,China

In this work silicon nitride(SIN)films were deposited on p-type mono-crystalline silicon substrates using SiH/NH by plasma enhanced chemical vapour deposition (PECVD).We used two kinds of subtract: the one is p-type(100)mono-crystalline silicon wafers with the following characteristics: 4-inch diameter,500μm thickness,and 10～20Ωcm resistivity,a Buehler diamond saw-cutter (model ISO-9001) was employed to cut the Si substrates to 2×2cm;the other is multi-crystalline silicon wafer with the following characteristics: 100×100cm,330±40μm,0.5～2.0Ωcm *** SiN films on silicon substrate have better surface passivation properties and better anti-reflection than the other material films,especially the SiN films on multi-crystalline silicon substrates have taken effect the bulk ***,these samples with the SiN film were prepared under different annealing ***,we want to fully understand hydrogen behavior during deposition and following annealing,meanwhile,the effective carrier lifetimeτ and the other electrical property of these samples with the SiN film were compared and contrasted with before and after annealing,these were also our focal point in this *** sample prepared after PECVD are submitted to rapid thermal annealing in N at 300～1100℃for different time intervals of *** characterization and the electrical property of the sample were measured using Quasi-steady State Photoconductance Decay (QSSPCD),Spectral ellipsometry,X-ray Photoelectric spectrum (XPS),Infrared Absorption Spectroscopy (IR),UV-Vis and Scanning Electron Microscope(SEM),then we can gain these experimental parameters:the refractive index n,the Si/N ratio,the hydric content of SiN film, and the situation of the surface *** measuring the passivation results of hydrogen plasma and SiN thin film,we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment,although it has little to do with the anne

关键词： SiN film PECVD crystalline silicon RTP

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Amorphous/crystalline （n-n） Si Heterojunction Photodetector Made by Q-Switched 0.532-mm Laser Pulses with Novel Technique

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Chinese Physics Letters 2006年第2期23卷 370-373页

作者： Raid A. Ismail Kadhim A. Hubeatir Abdullah K. Abass Department of Applied Physics Ministry of Technology Baghdad Iraq Department of Optoelectronics University of Technology Baghdad Iraq

Amorphous/crystalline n-n-isotype Si heterojunetions are made by a pulsed Q-switched second harmonic generation Nd：YAG laser. The process includes melting and subsequently fast resolidification of a thin front layer of monocrystalline Si by laser pulses to create an amorphous layer （phase transition）. Different laser energy densities are used to form the amorphous layer on a monocrystalline Si substrate, the results of the electrical characteristics of the heterojunctions are dependent strongly on the laser energy density. Optoelectronic properties such as current-voltage, capacitance voltage, and spectral sensitivity are measured in a-Si/c-Si hereto junctions （in the absence of anti-reflecting coating and frontal grid contact） prepared by different laser energy densities. The built-in-potential values extracted from current-voltage measurements are close to the published results of （n-p） amorphous/crystalline hereto junction made by glow discharge and plasma enhanced chemical vapour deposition. Furthermore, examination of the formation of amorphous pattern on Si surface is carried out with the help of optical microscopy. Best photovoltaic performance is recognized to be at ,5.6 J/cm^2. The photodetector shows a wide spectral response, and the peak response is at 780nm. On the other hand, this peak is independent of laser energy.

关键词： crystalline silicon SOLAR-CELLS

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