Electrical characterization and measurements of SiN thin films on crystalline silicon substrates by PECVD after RTP
会议名称：《第二届晶体硅太阳电池及材料科学与技术国际研讨会》
会议日期：2007年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
关 键 词：SiN film PECVD crystalline silicon RTP
摘 要：In this work silicon nitride(SIN)films were deposited on p-type mono-crystalline silicon substrates using SiH/NH by plasma enhanced chemical vapour deposition (PECVD).We used two kinds of subtract: the one is p-type(100)mono-crystalline silicon wafers with the following characteristics: 4-inch diameter,500μm thickness,and 10～20Ωcm resistivity,a Buehler diamond saw-cutter (model ISO-9001) was employed to cut the Si substrates to 2×2cm;the other is multi-crystalline silicon wafer with the following characteristics: 100×100cm,330±40μm,0.5～2.0Ωcm *** SiN films on silicon substrate have better surface passivation properties and better anti-reflection than the other material films,especially the SiN films on multi-crystalline silicon substrates have taken effect the bulk ***,these samples with the SiN film were prepared under different annealing ***,we want to fully understand hydrogen behavior during deposition and following annealing,meanwhile,the effective carrier lifetimeτ and the other electrical property of these samples with the SiN film were compared and contrasted with before and after annealing,these were also our focal point in this *** sample prepared after PECVD are submitted to rapid thermal annealing in N at 300～1100℃for different time intervals of *** characterization and the electrical property of the sample were measured using Quasi-steady State Photoconductance Decay (QSSPCD),Spectral ellipsometry,X-ray Photoelectric spectrum (XPS),Infrared Absorption Spectroscopy (IR),UV-Vis and Scanning Electron Microscope(SEM),then we can gain these experimental parameters:the refractive index n,the Si/N ratio,the hydric content of SiN film, and the situation of the surface *** measuring the passivation results of hydrogen plasma and SiN thin film,we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment,although it has little to do with the anne