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Sub-2 nm IrO_(2)/Ir nanoclusters with compressive strain and metal vacancies boost water oxidation in acid

Nano Research 2023年第1期16卷 334-342页

作者： Zhijuan Liu Guangjin Wang Jinyu Guo Shuangyin Wang Shuang-Quan Zang Henan Key Laboratory of Crystalline Molecular Functional Materials Henan International Joint Laboratory of Tumor Theranostical Cluster MaterialsGreen Catalysis Centerand College of ChemistryZhengzhou UniversityZhengzhou 450001China Hunan University State Key Laboratory of Chem/Bio-sensing and ChemometricsCollege of Chemistry and Chemical EngineeringChangsha 410082China School of Materials Science and Energy Engineering Foshan UniversityFoshan 528000China

IrO_(2)exhibits good stability but limited electrocatalytic activity for oxygen evolution reaction in *** engineering is an effective strategy to improve the intrinsic ability of electrocatalysts by tailoring their electronic ***,we have successfully synthesized IrO_(2)/Ir heterophase with compressive strain and metal vacancies via a simple substitution-etching *** virtue of the solubility of Cr in strong alkali,metal vacancies could be formed at surface after etching Cr-doped IrO_(2)/Ir in alkali,which leaded to modulated electronic ***,the substitution of Cr with smaller atom radius would induce the formation of compressive strain and the relocated atoms made the d-band center *** the regulated electronic structure and tuned d-band center,the obtained electrocatalyst only needed 285 mV to reach 10 mA·cm^(−2)in 0.1 M *** kinetic has been rapidly accelerated as indicated by the smaller Tafel slope and charge transfer *** calculations revealed that the d-band center and charge density distribution have been regulated with the introduction of defects in IrO_(2)/Ir,which significantly decreased the free energy barrier of rate determining *** work provides a valuable reference to design effective and defects-rich electrocatalysts.

关键词： IrO_(2)/Ir nanoclusters compressive strain metal vacancies d-band center water oxidation in acid

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Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys

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Chinese Physics B 2015年第1期24卷 440-443页

作者：赵一张进成薛军帅周小伟许晟瑞郝跃 Key Laboratory of Wind Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University

In order to investigate the influence of compressive strain on indium incorporation in In Al N and In Ga N ternary nitrides, In Al N/Ga N heterostructures and In Ga N films were grown by metal–organic chemical vapor deposition. For the heterostructures, different compressive strains are produced by Ga N buffer layers grown on unpatterned and patterned sapphire substrates thanks to the distinct growth mode; while for the In Ga N films, compressive strains are changed by employing Al Ga N templates with different aluminum compositions. By various characterization methods, we find that the compressive strain will hamper the indium incorporation in both In Al N and In Ga N. Furthermore, compressive strain is conducive to suppress the non-uniform distribution of indium in In Ga N ternary alloys.

关键词： compressive strain indium incorporation InAlN InGaN

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The role of strain in oxygen evolution reaction

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Journal of Energy Chemistry 2024年第6期93卷 322-344,I0009页

作者： Zihang Feng Chuanlin Dai Zhe Zhang Xuefei Lei Wenning Mu Rui Guo Xuanwen Liu Junhua You School of Materials Science and Engineering Northeastern UniversityShenyang 110819LiaoningChina School of Materials Science and Technology Shenyang University of TechnologyShenyang 110870LiaoningChina

The oxygen evolution reaction(OER)is a crucial step in metal-air batteries and water splitting technologies,playing a significant role in the efficiency and achievable heights of these two ***,the OER is a four-step,four-electron reaction,and its slow kinetics result in high overpotentials,posing a *** address this issue,numerous strategies involving modified catalysts have been proposed and proven to be highly *** these strategies,the introduction of strain has been widely reported because it is generally believed to effectively regulate the electronic structure of metal sites and alter the adsorption energy of catalyst surfaces with reaction ***,strain has many other effects that are not well known,making it an important yet unexplored *** on this,this review provides a detailed introduction to the various roles of strain in *** better explain these roles,the review also presents the definition of strain and elucidates the potential mechanisms of strain in OER based on the d-band center theory and adsorption volcano ***,the review showcases various ways of introducing strain in OER through examples reported in the latest literature,aiming to provide a comprehensive perspective for the development of strain ***,the review analyzes the appropriate proportion of strain introduction,compares compressive and tensile strain,and examines the impact of strain on *** the review offers prospects for future research directions in this emerging field.

关键词： Oxygen evolution reaction strain generation Tensile strain compressive strain strain mechanism strain effects

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strain Engineering for the Kapitza Resistance of the ZrO_(2)/α-Al_(2)O_(3)and YSZ/α-Al_(2)O_(3)Interfaces

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Acta Mechanica Solida Sinica 2022年第1期35卷 101-112页

作者： Yixuan Xue Jin-Wu Jiang Shanghai Key Laboratory of Mechanics in Energy Engineering Shanghai Institute of Applied Mathematics and MechanicsSchool of Mechanics and Engineering ScienceShanghai UniversityShanghai 200072China

The Kapitza resistance is of fundamental importance for the thermal stability of the interface between the ceramic top coat and the thermal growth oxide layer in the thermal barrier coating structure,which is widely used to protect high-temperature components in current gas turbine *** top coat typically consists of the ZrO_(2)partially stabilized by 8%Y2O3(YSZ),and the main component of the thermal growth oxide isα-Al_(2)O_(3).In this work,the Kapitza resistance is found to be a small value of 0.69 m^(2)K/GW for the YSZ/α-Al_(2)O_(3)interface based on the heat dissipation simulation *** indicates that the localization of thermal energy is rather weak,which is beneficial for the thermal stability of the YSZ/α-Al_(2)O_(3)*** Kapitza resistance can be further reduced to 0.50 m^(2)K/GW by a mechanical or thermal compressive strain of 8%.To explore the underlying mechanism for this strain effect,we analyze the phonon vibration and the microscopic deformation in the interface *** is revealed that the interface becomes denser through the compression-induced twisting of some Al-O_(zr)and A1-O_(Al)chemical bonds in the interface region,which is responsible for the reduction in the Kapitza *** temperature effect and crystal size effect on the Kapitza resistance of the YSZ/α-Al_(2)O_(3)interface are also systematically *** findings shall provide valuable information for further understanding of the thermal conductivity and thermal stability of the thermal barrier coating structures.

关键词： Kapitza resistance compressive strain Temperature Size

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compressively-strained GaSb nanowires with core-shell heterostructures

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Nano Research 2020年第9期13卷 2517-2524页

作者： Zhongyunshen Zhu Johannes Svensson Axel R.Persson Reine Wallenberg Andrei V.Gromov Lars-Erik Wernersson Departm ent of Electrical and Information Technology Lund UniversityBox 11822100 LundSweden Centre for Analysis and Synthesis Lund UniversityBox 12422100 Lundt Sweden NanoLund Lund UniversityBox 11822100 LundSweden EaStCHEM School of ChemistryUniversity of EdinburghEdinburgh EH93FJUK

GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors,however they require the introduction of compressive strain to enhance the transport ***,we for the first time demonstrate epitaxial GaSb-GaASxSb1-x core-shell nanowires with a compressively strained *** axial and hydrostatic strain in GaSb core have been measured by X-ray diffraction(XRD)and Raman scattering,*** optimal sample,almost without plastic relaxation,has an axial strain of-0.88%and a hydrostatic strain of-1.46%,leading to a noticeable effect where the light hole band is calculated to be 33.4 meV above the heavy hole band at the *** valence band feature offers more light holes to contribute the transport process,and thus may provide enhanced hole mobility by reducing both the interband scattering and the hole effective *** results show that lattice-mismatched epitaxial core-shell heterostructures of high quality can also be realized in the promising yet demanding GaSb-based system.

关键词： compressive strain GaSb-GaAsxSbi-x core-shell nanowires heterostructure p-type transistors

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Grain boundary effect on structural, optical, and electrical properties of sol-gel synthesized Fe-doped SnO_(2) nanoparticles

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Chinese Physics B 2021年第4期30卷 555-564页

作者： Archana V Lakshmi Mohan Kathirvel P Saravanakumar S Department of Sciences Amrita School of EngineeringCoimbatoreAmrita Vishwa VidyapeethamIndia Research and Development Center Bharathiar UniversityCoimbatore-641046TamilnaduIndia GRD Center for Materials Research Department of PhysicsP S G College of TechnologyCoimbatore-641004TamilnaduIndia Department of Physics N S S CollegePandalam-689501KeralaIndia

Tin oxide(SnO_(2)) and iron-doped tin oxide(Sn_(1-x)Fe_(x)O_(2),x=0.05 wt%,0.10 wt%) nanoparticles are synthesized by the simple sol-gel *** structural characterization using x-ray diffraction(XRD) confirms tetragonal rutile phases of the *** variations in lattice parameters and relative intensity with Fe-doping concentration validate the incorporation of iron into the *** compressive strain present in the lattice estimated by using peak profile analysis through using Williamson-Hall plot also exhibits the influence of grain boundary formation in the *** radiative recombination and quenching observed in optical characterization by using photoluminescence spectrum(PL) and the shift in the band gap estimated from UV-visible diffused reflectance spectrum corroborate the grain boundary *** spectrum and the morphological analysis by using a field emission scanning electron microscope(FESEM) also indicate the formation of grain *** compositional analysis by using energy dispersive x-ray spectrum(EDAX) confirms Fe in the SnO_(2) *** conductivity studies exhibit that the impendence increases with doping concentration increasing and the loss factor decreases at high frequencies with doping concentration increasing,which makes the Sn_(1-x)Fe_(x)O_(2) a potential candidate for device applications.

关键词： sol-gel compressive strain grain boundary AC conductivity

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A method to access the electro-mechanical properties of superconducting thin film under uniaxial compression

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Acta Mechanica Sinica 2020年第5期36卷 1046-1050,I0002页

作者： Xiyang Su Cong Liu Jun Zhou Xingyi Zhang Youhe Zhou Department of Mechanics and Engineering Sciences College of Civil Engineering and MechanicsLanzhou UniversityLanzhou 730000China Key Laboratory of Mechanics on Disaster and Environment in Western China Attached to the Ministry of Education of China.Lanzhou University Lanzhou 730000China

Superconducting thin films are widely used in superconducting quantum interferometers,microwave devices,*** electrical performance of a superconducting thin film is often affected by structural deformation or *** on four-point bending of a Cu-Be beam,we constructed a device that could apply uniaxial,*** strain to a superconducting thin film at both room temperature and the temperature of liquid *** thin film was placed into a slot carved in the Cu-Be *** optimized the size of this slot via numerical *** results indicated that the slot width was optimal when it was same as the width of the Cu-Be ***,the sample bended hardly after machining two slits along width direction on both sides of the slot.A YBa2Cu3O7-δSrTiO3(YBCO-STO)film was used as an *** was loadedby the aforementioned device to determine its electrical characteristics as functions of the uniaxial-uniform-compressive *** optimized design allowed the sample to be compressed to a larger strain without breaking it.

关键词： YBa2Cu3O7-δthin film compressive strain Critical current density

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Morphology and strain control of hierarchical cobalt oxide nanowire electrocatalysts via solvent effect

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Nano Research 2020年第11期13卷 3130-3136页

作者： Xiuming Bu Xiongyi Liang Kingsley O.Egbo Zebiao Li You Meng Quan Quan Yang Yang Li Kin Man Yu Chi-Man Lawrence Wu Johnny C.Ho Department of Materials Science and Engineering City University of Hong KongKowloonHong Kong SARChina Department of Physics City University of Hong KongKowloonHong KongKowloonHong Kong SARChina State Key Laboratory of Terahertz and Millimeter Waves City University of Hong KongKowloonHong Kong SARChina

Designing highly efficient and low-cost electrocatalysts for oxygen evolution reaction is important for many renewable energy *** particular,strain engineering has been demonstrated as a powerful strategy to enhance the electrochemical performance of catalysts;however,the required complex catalyst preparation process restricts the implementation of strain ***,we report a simple self-template method to prepare hierarchical porous Co_(3)O_(4)nanowires(PNWs)with tunable compressive strain via thermal-oxidation-transformation of easily prepared oxalic acid-cobalt nitrate(Co(NO_(3))_(2))composite *** on the complementary theoretical and experimental studies,the selection of proper solvents in the catalyst preparation is not only vital for the hierarchical structural evolution of Co_(3)O_(4) but also for regulating their compressive surface *** of the rich surface active sites and optimized electronic Co d band centers,the PNWs exhibit the excellent activity and stability for oxygen evolution reaction,delivering a low overpotential of 319 mV at 10 mA·cm^(−2)in 1 M KOH with a mass loading 0.553 mg·cm^(−2),which is even better than the noble metal catalyst of RuO_(2).This work provides a cost-effective example of porous Co_(3)O_(4)nanowire preparation as well as a promising method for modification of surface strain for the enhanced electrochemical performance.

关键词： hierarchical structure morphology control compressive strain solvent effect oxygen evolution reaction

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Beam multiplexing of diode laser arrays

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Journal of Semiconductors 2015年第4期36卷 70-73页

作者：柳瑞丛刘媛媛陈雪杨富华 Institute of Semiconductors Chinese Academy of Sciences

Design and experimental studies on the wavelength multiplexing and polarization multiplexing of diode laser arrays were carried out. First, the structure of a A1GalnAs/GaAs/AIGaAs quantum well under compressive strain was used because the characteristic of wavelength was easier to adjust. We obtained diode laser arrays lasing in five different wavelengths, about 760 nm, 800 nm, 860 nm, 930 nm, and 976 nm. At the same time, four edge filters were designed, and an experimental study on the beam multiplexing of diode laser arrays was carried out. Second, two beams with different polarization states were composited using a half wave plate and a polarizing beam-splitter prism. After that, the beam focusing system was designed. Ultimately, ten beams of diode laser arrays in five wavelengths and two polarization states were composited, the total output power was 196 W and the overall efficiency was 76%. The size of the output focus spot was 144 × 1330μm2, and the power density of the focused light was as high as 1.02 ×105 W/cm2. Compared with a single diode laser array, the power density of the composite beam was improved by 4.3 times.

关键词： compressive strain diode laser arrays beam multiplexing edge filter polarizing composite

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compressively strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm

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Journal of Semiconductors 2005年第9期26卷 1688-1691页

作者：潘教青王圩朱洪亮赵谦王宝军周帆王鲁峰中国科学院半导体研究所光电子研究发展中心北京100083

The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.

关键词： DFB laser compressive strain quantum well

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