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Grain boundary effect on structural, optical, and electrical properties of sol-gel synthesized Fe-doped SnO_(2) nanoparticles

solgel 的结构、光、电的性质上的谷物边界效果综合了做 Fe 的 SnO2 nanoparticles

作     者:Archana V Lakshmi Mohan Kathirvel P Saravanakumar S Archana V;Lakshmi Mohan;Kathirvel P;Saravanakumar S

作者机构:Department of SciencesAmrita School of EngineeringCoimbatoreAmrita Vishwa VidyapeethamIndia Research and Development CenterBharathiar UniversityCoimbatore-641046TamilnaduIndia GRD Center for Materials ResearchDepartment of PhysicsP S G College of TechnologyCoimbatore-641004TamilnaduIndia Department of PhysicsN S S CollegePandalam-689501KeralaIndia 

出 版 物:《Chinese Physics B》 (中国物理B(英文版))

年 卷 期:2021年第30卷第4期

页      面:555-564页

核心收录:

学科分类:081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学] 

主  题:sol-gel compressive strain grain boundary AC conductivity 

摘      要:Tin oxide(SnO_(2)) and iron-doped tin oxide(Sn_(1-x)Fe_(x)O_(2),x=0.05 wt%,0.10 wt%) nanoparticles are synthesized by the simple sol-gel *** structural characterization using x-ray diffraction(XRD) confirms tetragonal rutile phases of the *** variations in lattice parameters and relative intensity with Fe-doping concentration validate the incorporation of iron into the *** compressive strain present in the lattice estimated by using peak profile analysis through using Williamson-Hall plot also exhibits the influence of grain boundary formation in the *** radiative recombination and quenching observed in optical characterization by using photoluminescence spectrum(PL) and the shift in the band gap estimated from UV-visible diffused reflectance spectrum corroborate the grain boundary *** spectrum and the morphological analysis by using a field emission scanning electron microscope(FESEM) also indicate the formation of grain *** compositional analysis by using energy dispersive x-ray spectrum(EDAX) confirms Fe in the SnO_(2) *** conductivity studies exhibit that the impendence increases with doping concentration increasing and the loss factor decreases at high frequencies with doping concentration increasing,which makes the Sn_(1-x)Fe_(x)O_(2) a potential candidate for device applications.

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